SB830F-LF

更新时间： 2024-09-16 13:13:15

品牌	Logo	应用领域
WTE		整流二极管局域网
页数	文件大小	规格书
3页	40K
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数据手册

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SB830F-LF 数据手册

WTE

POWER SEMICONDUCTORS

SB820 – SB8100

8.0A SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring for Transient Protection

High Current Capability, Low Forward

Low Reverse Leakage Current

High Surge Current Capability

Plastic Material has UL Flammability

Classification 94V-O

TO-220A

Dim

Min

14.9

—

Max

15.1

10.5

2.87

4.06

14.22

0.94

3.91 Ø

6.86

4.70

2.79

0.64

1.40

5.20

2.62

3.56

13.46

0.68

3.74 Ø

5.84

4.44

2.54

0.35

1.14

4.95

PIN1

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ D

Mechanical Data

Case: TO-220A Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Weight: 2.24 grams (approx.)

Mounting Position: Any

All Dimensions in mm

Marking: Type Number

PIN 1 +

PIN 2 -

Case

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol SB820 SB830 SB840 SB850 SB860 SB880 SB8100 Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current

@T_C= 95°C

8.0

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

I^FSM

150

Forward Voltage

@I_F= 8.0A

V^FM

I^RM

0.55

0.75

0.85

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

0.5

Typical Junction Capacitance (Note 1)

C^j

700

6.9

K/W

°C

Typical Thermal Resistance Junction to Case (Note 2)

Operating and Storage Temperature Range

R^ꢀ^JC

T^j, T^STG

-65 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal resistance junction to case mounted on heatsink.

SB820 – SB8100

1 of 3

12 3

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