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SB830D-T3 PDF预览

SB830D-T3

更新时间: 2024-11-05 22:27:15
品牌 Logo 应用领域
WTE 整流二极管瞄准线功效
页数 文件大小 规格书
3页 46K
描述
8.0A D2PAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

SB830D-T3 数据手册

 浏览型号SB830D-T3的Datasheet PDF文件第2页浏览型号SB830D-T3的Datasheet PDF文件第3页 
WTE  
POWER SEMICONDUCTORS  
SB820D – SB8100D  
8.0A D2PAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER  
Features  
!
!
Schottky Barrier Chip  
C
Guard Ring Die Construction for  
Transient Protection  
A
J
!
!
!
!
High Current Capability  
Low Power Loss, High Efficiency  
High Surge Current Capability  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
B
D
E
PIN 1  
2
3
G
H
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ K  
P
P
D2 PAK/TO-263  
Mechanical Data  
Dim  
A
Min  
9.8  
9.6  
4.4  
8.5  
Max  
10.4  
10.6  
4.8  
!
!
Case: Molded Plastic  
B
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
C
!
!
!
!
!
PIN 1 -  
PIN 3 -  
+
D
9.1  
Case PIN 2  
E
0.7  
Weight: 1.7 grams (approx.)  
Mounting Position: Any  
G
H
1.0  
1.4  
Potive CT  
0.9  
Marking: Type Number  
PIN 1 +  
PIN 3 +  
-
J
1.2  
0.3  
2.35  
1.4  
Standard Packaging: 24mm Tape (EIA-481)  
Case PIN 2  
K
0.7  
Negative CT  
P
2.75  
Suffix with “N”  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
SB  
820D  
SB  
830D  
SB  
840D  
SB  
850D  
SB  
860D  
SB  
SB  
Characteristic  
Symbol  
Unit  
880D 8100D  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
20  
14  
30  
21  
40  
28  
50  
60  
42  
80  
56  
100  
70  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
35  
V
A
Average Rectified Output Current  
@TC = 100°C  
8.0  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
150  
A
Forward Voltage  
@IF = 8.0A  
VFM  
IRM  
0.55  
0.75  
0.85  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
0.5  
50  
mA  
Typical Junction Capacitance (Note 1)  
Cj  
400  
60  
pF  
K/W  
°C  
Typical Thermal Resistance Junction to Ambient  
Operating and Storage Temperature Range  
RJA  
Tj, TSTG  
-50 to +150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
SB820D – SB8100D  
1 of 3  
© 2002 Won-Top Electronics  

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