Datasheet > SB411D

SB411D

更新时间： 2024-01-02 17:02:44

品牌	Logo	应用领域
商升特 - SEMTECH		二极管局域网
页数	文件大小	规格书
2页	141K
描述
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

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中文翻译

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SB411D 数据手册

SB411D

SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

for low power rectification and switching power supply

Features

•

Small surface mounting type.

High reliability.

SOT-23 Plastic Package

Marking

Marking Code: FE

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Peak Reverse Voltage

DC Reverse Voltage

Symbol

V_RM

V_R

Value

Unit

Mean Rectifying Current

Peak Forward Surge Current ¹⁾

Junction Temperature

0.5

I_FSM

T_j

125

Storage Temperature Range

¹⁾60Hz for 1

T_s

-40 to +125

Characteristics at T_a= 25 C

Parameter

Forward Voltage

Symbol

V_F

Min

Typ

Max

Unit

at I_F= 10mA

0.3

0.5

at I_F= 500mA

Reverse Current

I_R

µA

at V_R=10V

Capacitance Between Terminals

at V_R=10V, f=1MHz

C_T

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 21/10/2005

中文翻译

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