Datasheet > SB420D

SB420D

更新时间： 2024-01-31 16:07:32

品牌	Logo	应用领域
商升特 - SEMTECH		二极管局域网
页数	文件大小	规格书
2页	142K
描述
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

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中文翻译

获取价格

数据手册

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SB420D 数据手册

SB420D

SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

for low power rectification

Features

•

Small surface mounting type.

High reliability.

SOT-23 Plastic Package

Marking

Marking Code: FF

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

V_RM

Value

Unit

Maximum Peak Reverse Voltage

DC Reverse Voltage

Mean Rectifying Current

Peak Forward Surge Current ¹⁾

Junction Temperature

Storage Temperature Range

¹⁾60Hz for 1

V_R

I_O

0.1

I_FSM

T_j

125

T_s

-40 to +125

Characteristics at T_a= 25 C

Parameter

Forward Voltage

Symbol

V_F

Min

Typ

Max

0.45

Unit

at I_F= 10mA

Reverse Current

I_R

µA

at V_R=10V

Capacitance Between Terminals

at V_R=10V, f=1MHz

C_T

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 21/10/2005

中文翻译

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