Datasheet > SB425D

SB425D

更新时间： 2024-01-01 11:38:04

品牌	Logo	应用领域
商升特 - SEMTECH		二极管
页数	文件大小	规格书
1页	119K
描述
Silicon Epitaxial Planar Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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SB425D 数据手册

SB425D

Silicon Epitaxial Planar Schottky Barrier Diode

Low current rectification

Marking Code: "YA"

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Repetitive Peak Reverse Voltage

Reverse Voltage

Symbol

V_RM

V_R

Value

Unit

Average Rectified Forward Current ¹⁾

Peak Forward Surge Current (60 Hz 1 Cycle) ¹⁾

Junction Temperature

100

I_F(AV)

I_FSM

T_j

125

Storage Temperature Range

¹⁾Rating of per diode

- 55 to + 125

T_stg

Characteristics at T_a= 25 C

Parameter

Symbol

V_F

Typ.

Max.

Unit

Forward Voltage

at I_F= 10 mA

at I_F= 100 mA

0.34

0.55

Reverse Current

at V_R= 10 V

I_R

µA

Capacitance between Terminals

at V_R= 10 V, f = 1 MHz

C_t

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 04/08/2007

中文翻译

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