Datasheet > SB425D

SB425D

更新时间： 2023-12-06 20:00:48

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	162K
描述
肖特基二极管

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数据手册

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SB425D 数据手册

SB425D

Silicon Epitaxial Planar Schottky Barrier Diode

Features

• High reliability

• Low reverse current

SOT-23 Plastic Package

1. Anode 2. Anode 3. Cathode

Applications

• Low power rectification

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RM

V_R

Value

Unit

Repetitive Peak Reverse Voltage

Reverse Voltage

Average Rectified Forward Current ¹⁾

Peak Forward Surge Current (60 Hz 1 Cycle) ¹⁾

Junction Temperature

I_F(AV)

I_FSM

T_j

100

125

℃

Storage Temperature Range

T_stg

- 55 to + 125

Rating of per diode

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min

Typ.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 100 μA

Forward Voltage

at I_F= 10 mA

V_F

0.34

0.55

at I_F= 100 mA

Reverse Current

at V_R= 10 V

I_R

µA

Capacitance between Terminals

at V_R= 10 V, f = 1 MHz

C_t

1 / 3

Dated : 31/07/2023 Rev:02

12 3

中文翻译

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