Datasheet > SB421D

SB421D

更新时间： 2023-12-06 20:11:04

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	144K
描述
肖特基二极管

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中文翻译

获取价格

数据手册

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SB421D 数据手册

SB421D

Silicon Epitaxial Planar Schottky Barrier Diode

Features

• High reliability

• Small mold type

• Low forward voltage

SOT-23 Plastic Package

1. Anode 2. NC 3. Cathode

Applications

•Small current rectification

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RRM

V_R

Value

Unit

Repetitive Peak Reverse Voltage

Reverse Voltage

Average Forward Current

I_F(AV)

100

Peak Forward Surge Current 8.3 ms Half Sine-wave

Superimposed on Rated Load (JEDEC method)

I_FSM

Junction Temperature

T_j

125

℃

Storage Temperature Range

T_stg

- 55 to + 125

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 100 µA

Forward Voltage

at I_F= 10 mA

at I_F= 100 mA

V_F

I_R

0.34

0.55

Reverse Current

at V_R= 10 V

µA

1 / 3

Dated：01/09/2023 Rev：01

12 3

中文翻译

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