Datasheet > SB420D

SB420D

更新时间： 2023-12-06 20:08:13

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	256K
描述
肖特基二极管

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中文翻译

获取价格

数据手册

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SB420D 数据手册

SB420D

Silicon Epitaxial Planar Schottky Barrier Diode

Features

• Small surface mounting type

• High reliability

• Low forward voltage drop

• Fast switching

• Ultra-small surface mount package

1. Anode 2. Cathode 3.NC

SOT-23 Plastic Package

Applications

• Low Power Rectification

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

Unit

Maximum Peak Reverse Voltage

V_RM

DC Reverse Voltage

V_R

Average Rectified Forward Current

I_F(AV)

100

Peak Forward Surge Current

Junction Temperature

I_FSM

T_j

125

℃

Storage Temperature Range

T_stg

-40 to +125

Characteristics at T_a= 25℃

Parameter

Symbol

V_F

Typ

Max

0.45

Unit

Forward Voltage

at I_F= 10 mA

Reverse Current

I_R

µA

at V_R=10 V

Capacitance Between Terminals

at V_R=10 V, f = 1MHz

C_T

1 / 3

Dated：16/11/2021 Rev: 02

12 3

中文翻译

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