Datasheet > S8550-SOT-23

S8550-SOT-23

更新时间： 2024-11-19 01:26:03

品牌	Logo	应用领域
海德 - HDSEMI		/
页数	文件大小	规格书
4页	2213K
描述
SOT-23 Plastic-Encapsulate Transistors

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中文翻译

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数据手册

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S8550-SOT-23 数据手册

S8550

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR( P NP )

Features

SOT- 23

●

Complimentary to S8050

Collector Current: I_C=-0.5A

Marking:

●

2TY

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-40

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

-25

-5

Collector Current

-500

300

℃/W

℃

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

P_C

R_ΘJA

T_j

417

150

Storage Temperature

T_stg

-55～+150

℃

Electrical Characteristics (T=25℃ Unless otherwise specified）

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C= -100μA, I_E=0

I_C=-1mA, I_B=0

Min

-40

-25

-5

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E= -100μA, I_C=0

V_CB= -40V, I_E=0

-0.1

400

μA

Collector cut-off current

I_CEO

V_CE= -20V, I_B=0

Emitter cut-off current

I_EBO

V_EB= -3V, I_C=0

h_FE(1)

V_CE= -1V, I_C= -50mA

V_CE= -1V, I_C= -500mA

I_C=-500mA, I_B= -50mA

120

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

-0.6

-1.2

V_CE= -6V, I_C= -20mA

f=30MHz

Transition frequency

150

MHz

f_T

CLASSIFICATION OF h_FE

RANK

RANGE

120-200

200-350

300-400

igh Diode Semiconductor

12 3 4

中文翻译

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