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S858TA3 PDF预览

S858TA3

更新时间: 2024-11-17 22:22:35
品牌 Logo 应用领域
威世 - VISHAY 射频和微波射频放大器微波放大器集成电源管理电路
页数 文件大小 规格书
3页 88K
描述
BIPMIC - Cascadable Silicon Bipolar Amplifier

S858TA3 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.72其他特性:LOW NOISE
特性阻抗:50 Ω构造:COMPONENT
增益:17 dB最大输入功率 (CW):20 dBm
最大工作频率:2500 MHz最小工作频率:100 MHz
射频/微波设备类型:WIDE BAND LOW POWER最大电压驻波比:1.8
Base Number Matches:1

S858TA3 数据手册

 浏览型号S858TA3的Datasheet PDF文件第2页浏览型号S858TA3的Datasheet PDF文件第3页 
S858TA3  
Vishay Telefunken  
BIPMIC – Cascadable Silicon Bipolar Amplifier  
Electrostatic sensitive device.  
Observe precautions for handling.  
Applications  
General purpose 50 gain block for narrow and broad this amplifier with minimal external circuitry, thus pro-  
band IF and RF amplifiers in commercial and industrial viding a simple, cost effective way to achieve low level  
applications. The 50 level allows directly to cascade amplification.  
Features  
Broadband amplification  
Low noise figure (3.3 db @900 Mhz)  
Low cost surface mount plastic package  
Few external components  
Low operating voltage (6 V)  
50 cascadable gain block  
High gain (17.5 dB @900 MHz)  
2
1
13 579  
94 9279  
3
4
S858TA3 Marking: TA3  
Plastic case (SOT 143)  
1 = RF-output, 2 = Ground,  
3 = RF-input, 4 = Ground  
Typical biasing configuration  
Absolute Maximum Ratings  
T
amb  
= 25 C, unless otherwise specified  
Parameter  
Device current  
RF input power  
Total power dissipation  
Junction temperature  
Storage temperature range  
Test Conditions  
Symbol  
I
bias  
Value  
35  
20  
200  
150  
Unit  
mA  
dBm  
mW  
C
P
in  
T
amb  
60 C  
P
tot  
T
j
T
stg  
–65 to +150  
C
Maximum Thermal Resistance  
T
amb  
= 25 C, unless otherwise specified  
Parameter  
Test Conditions  
Symbol  
R
thJA  
Value  
450  
Unit  
K/W  
3
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm  
plated with 35 m Cu  
Document Number 85054  
Rev. 3, 20-Jan-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (3)  

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