Datasheet > S85B

S85B

更新时间： 2024-11-18 12:46:55

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
2页	397K
描述
High Surge Capability

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中文翻译

获取价格

数据手册

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S85B 数据手册

S85B thru S85JR

V_RRM= 100 V - 1600 V

I_F=85 A

Silicon Standard

Recovery Diode

Features

• High Surge Capability

• Types up to 1600 V V_RRM

DO-5 Package

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

S85G (R)

S85J (R)

Parameter

Symbol

S85B (R)

S85D (R)

Unit

V_RRM

V_RMS

V_DC

I_F

400

280

400

600

420

600

Repetitive peak reverse voltage

RMS reverse voltage

100

200

140

200

DC blocking voltage

100

T_C≤ 140 °C

Continuous forward current

Surge non-repetitive forward

current, Half Sine Wave

I_F,SM

T_C= 25 °C, t_p= 8.3 ms

1800

T_j

-65 to 180

Operating temperature

Storage temperature

-65 to 180

°C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

S85G (R)

S85J (R)

Parameter

Symbol

S85B (R)

S85D (R)

Unit

V_F

I_R

I_F= 85 A, T_j= 25 °C

V_R= 100 V, T_j= 25 °C

V_R= 100 V, T_j= 180 °C

1.1

Diode forward voltage

Reverse current

1.1

μA

Thermal characteristics

Thermal resistance, junction -

case

R_thJC

0.65

°C/W

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中文翻译

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