Datasheet > S858TA1-GS08

S858TA1-GS08

更新时间： 2024-09-15 14:35:39

品牌	Logo	应用领域
威世 - VISHAY		ATM 异步传输模式射频微波
页数	文件大小	规格书
3页	79K
描述
Wide Band Low Power Amplifier, 100MHz Min, 2500MHz Max, PLASTIC, SOT 143, 4 PIN

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中文翻译

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技术参数
数据手册

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S858TA1-GS08 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.72	Is Samacsys：	N
特性阻抗：	50 Ω	增益：	17 dB
最大输入功率 (CW)：	20 dBm	最大工作频率：	2500 MHz
最小工作频率：	100 MHz	射频/微波设备类型：	WIDE BAND LOW POWER
最大电压驻波比：	1.8	Base Number Matches：	1

S858TA1-GS08 数据手册

S858TA1

Vishay Semiconductors

BIPMIC – Cascadable Silicon Bipolar Amplifier

Electrostatic sensitive device.

Observe precautions for handling.

Applications

General purpose 50 gain block for narrow and broad this amplifier with minimal external circuitry, thus pro-

band IF and RF amplifiers in commercial and industrial viding a simple, cost effective way to achieve low level

applications. The 50 level allows directly to cascade amplification.

Features

Broadband amplification

Low noise figure (3.3 db @900 Mhz)

Low cost surface mount plastic package

Few external components

Low operating voltage (6 V)

50 cascadable gain block

High gain (17.5 dB @900 MHz)

13 579

94 9279

S858TA1 Marking: 858

Plastic case (SOT 143)

1 = RF-output, 2 = Ground,

3 = RF-input, 4 = Ground

Typical biasing configuration

Absolute Maximum Ratings

amb

= 25 C, unless otherwise specified

Parameter

Device current

RF input power

Total power dissipation

Junction temperature

Storage temperature range

Test Conditions

Symbol

bias

Value

200

150

Unit

dBm

amb

≤ 60 C

tot

stg

–65 to +150

Maximum Thermal Resistance

amb

= 25 C, unless otherwise specified

Parameter

Test Conditions

Symbol

thJA

Value

450

Unit

K/W

Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm

plated with 35 m Cu

Document Number 85053

Rev. 3, 20-Jan-99

www.vishay.com

1 (3)

12 3

中文翻译

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