Datasheet > S8410MG

S8410MG

更新时间： 2024-09-18 12:04:43

品牌	Logo	应用领域
ROITHNER		二极管激光二极管
页数	文件大小	规格书
5页	340K
描述
Infrared Laser Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

S8410MG 数据手册

S8410MG

TECHNICAL DATA

Infrared Laser Diode

Features

•

Lasing Mode Structure: multi mode

Peak Wavelength : typ. 840 nm

Optical Ouput Power: 10 mW

Package: 5.6 mm

Electrical Connection

Pin Configuration

Bottom View

Function

LD Cathode

LD Anode

n.c.

Absolute Maximum Ratings (T_C=20°C)

Item

Symbol

Value

Unit

CW Output Power

P_O

V_r

LD Reverse Voltage

Operating Case Temperature

Storage Temperature

T_C

T_stg

-10 … +60

-15 … +85

°C

Specifications (T_C=20°C)

Item

Optical Specifications

CW Output Power

Symbol

Min.

Typ.

Max.

Unit

P_O

λ_C

θ_║

θ_┴

840

deg

Center Wavelength

830

850

FWHM Beam Divergence

Electrical Specifications

Threshold Current

Operating Current

Slope Efficiency

I_th

I_op

0.95

1.7

mW/mA

0.7

Operating Voltage

U_op

2.1

The above specifications are for reference purpose only and subjected to change without prior notice.

04.10.2011

S8410MG

1 of 5

12 3 4 5

中文翻译

下载PDF

与S8410MG相关器件

型号	品牌	获取价格	描述	数据表
S8-4148	MICROSEMI	获取价格	Switching Diode Array
S8-4148E3	MICROSEMI	获取价格	Switching Diode Array
S8-4148E3TR	MICROSEMI	获取价格	暂无描述
S8-4148TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 75V V(RWM), Unidirectional, 4 Element, Silicon, SOIC-8 PIN
S8-4148TRE3	MICROSEMI	获取价格	Diode,
S8-4150	MICROSEMI	获取价格	Switching Diode Array
S8-4150E3	MICROSEMI	获取价格	Switching Diode Array
S8-4150E3TR	MICROSEMI	获取价格	暂无描述
S8-4150TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 50V V(RWM), Unidirectional, 4 Element, Silicon, SOIC-8 PIN
S8-4150TRE3	MICROSEMI	获取价格	Diode,