Datasheet > S8050

S8050

更新时间： 2024-11-07 18:06:23

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	415K
描述
SOT-23

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中文翻译

获取价格

数据手册

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S8050 数据手册

SS8050

BIPOLAR TRANSISTOR (NPN)

FEATURES

 Complementary to SS8550

 Excellent h_FELinearity

 High Collector Current

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

1500

300

°C/W

°C

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

417

150

Storage Temperature

TSTG

-55 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I_C=100uA，I_E=0

V(BR)CBO

Collector-base breakdown voltage

V(BR)CEO

V(BR)EBO

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=0.1mA，I_B=0

I_E=100uA，I_C=0

V_CB=40V, I_E=0

V_CE=20V, I_B=0

I_CBO

I_CEO

0.1

400

Collector cut-off current

Emitter cut-off current

I_EBO

uA V_EB=5V, I_C=0

V_CE=1V, I_C=100mA

h_FE1

120

DC current gain

h_FE2

V_CE=1V, I_C=800mA

I_C=500mA，I_B=50mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

0.6

1.2

V_BE(sat)

f_T

V_CE=10V,I_C=50mA, f=30

100

MHz

CLASSIFICATION OF h_FE

Rank

Range

120-200

200-350

300-400

Marking

1 / 4

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中文翻译

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