Datasheet > S8050 J3Y

S8050 J3Y

更新时间： 2024-11-25 05:34:43

品牌	Logo	应用领域
其他 - ETC		光电二极管
页数	文件大小	规格书
2页	218K
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S8050 J3Y PDF

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S8050 J3Y 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

本资料由东莞长电代理：FUYAT CO.，LTD提供0769-85388861

SOT-23 Plastic-Encapsulate Transistors

SOT-23

S8050

TRANSISTOR (NPN)

FEATURES

1. BASE

Complimentary to S8550

Collector Current: I_C=0.5A

2. EMITTER

3. COLLECTOR

MARKING: J3Y

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Dissipation

0.5

0.3

P_C

Junction Temperature

Storage Temperature

150

-55-150

T_j

℃

T_stg

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C= 100 A, I_E=0

I_C=1mA, I_B=0

I_E=100 A, I_C=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

0.1

350

V_CB=40 V , I_E=0

Collector cut-off current

I_CEO

V_CB=20V , I_E=0

Emitter cut-off current

I_EBO

V_EB= 5V , I_C=0

120

H_FE(1)

V_CE=1V, I_C= 50mA

V_CE=1V, I_C= 500mA

I_C=500 mA, I_B= 50mA

DC current gain

H_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

0.6

1.2

V_CE(sat)

V_BE(sat)

V_CE=6V, I_C= 20mA

f=30MHz

150

MHz

Transition frequency

f_T

CLASSIFICATION OF h_FE(1)

Rank

Range

120-200

200-350

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