Datasheet > S8050-AP

S8050-AP

更新时间： 2024-01-30 21:03:54

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
2页	75K
描述
Transistor,

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技术参数
数据手册

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S8050-AP 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
JESD-609代码：	e3	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

S8050-AP 数据手册

S8050

M C C

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20736 Marilla Street Chatsworth

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S8050-B

S8050-C

S8050-D

Micro Commercial Components

Features

•

TO-92 Plastic-Encapsulate Transistors

Capable of 0.625Watts(Tamb=25^OC) of Power Dissipation.

Collector-current 0.5A

NPN Silicon

Transistors

Collector-base Voltage 40V

Operating and storage junction temperature range: -55^OC to +150^OC

Marking : S8050

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

TO-92

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

Collector-Base Breakdown Voltage

5.0

---

Vdc

(I =100uAdc, I_E=0)

Collector-Emitter Breakdown Voltage

(I =0.1mAdc, I_B=0)

Emitter-Base Breakdown Voltage

---

Vdc

(I =100uAdc, I_C=0)

Collector Cutoff Current

0.1

uAdc

CBO

(V_CB=40Vdc, I =0)

Collector Cutoff Current

CEO

(V_CE=20Vdc, I =0)

I_EBO

Emitter Cutoff Current

(V_EB=3.0Vdc, I =0)

ON CHARACTERISTICS

h_FE(1)

DC Current Gain

---

300

---

(I =50mAdc, V_CE=1.0Vdc)

h_FE(2)

DCCurrent Gain

(I =500mAdc, V_CE=1.0Vdc)

V_CE(sat)

V_BE(sat)

V_EB

Collector-Emitter Saturation Voltage

0.6

1.2

1.4

Vdc

(I =500mAdc, I_B=50mAdc)

Base-Emitter Saturation Voltage

(I =500mAdc, I_B=50mAdc)

DIMENSIONS

Base- Emitter Voltage

(I_E=100mAdc)

INCHES

MIN

.170

.550

.010

.130

.010

MIN

DIM

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

SMALL-SIGNAL CHARACTERISTICS

.190

.590

.020

.160

.104

4.33

4.30

13.97

0.36

3.30

2.44

f_T

Transistor Frequency

150

---

MHz

(I =20mAdc, V_CE=6.0Vdc, f=30MHz)

CLASSIFICATION OF HFE (1)

Rank

Range

85-150

120-200

160-300

www.mccsemi.com

1 of 2

Revision: 5

2007/03/02

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