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S8050 PDF预览

S8050

更新时间: 2024-11-09 12:36:43
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管光电二极管
页数 文件大小 规格书
2页 142K
描述
TRANSISTOR (NPN)

S8050 数据手册

 浏览型号S8050的Datasheet PDF文件第2页 
RoHS  
S8050  
S8050 TRANSISTOR (NPN)  
TO-92  
FEATURES  
1. EMITTER  
2. BASE  
Power dissipation  
PCM:  
0.625 W (Tamb=25)  
3. COLLECTOR  
Collector current  
ICM:  
0.5  
40  
A
Collector-base voltage  
1 2 3  
V(BR)CBO  
:
V
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
MIN  
40  
25  
5
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Ic= 100µA, IE=0  
Ic= 0.1mA, IB=0  
V
V
IE= 100µA, IC=0  
VCB= 40V, IE=0  
0.1  
0.1  
0.1  
300  
µA  
µA  
µA  
Collector cut-off current  
ICEO  
VCE= 20V, IB=0  
Emitter cut-off current  
IEBO  
VEB= 5V, IC=0  
hFE(1)  
VCE= 1V, IC= 50mA  
VCE= 1V, IC= 500mA  
IC=500mA, IB=50 mA  
IC=500mA, IB=50 mA  
85  
50  
DC current gain  
hFE(2)  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VCE(sat)  
VBE(sat)  
0.6  
1.2  
V
V
V
CE= 6 V, IC=20mA  
Transition frequency  
150  
MHz  
fT  
f =30MHz  
CLASSIFICATION OF hFE(1)  
WEJ ELECTRONIC CO.,LTD  
Rank  
B
C
D
Range  
85-160  
120-200  
160-300  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.,LTD  

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