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S73WS256NEEBAWT70 PDF预览

S73WS256NEEBAWT70

更新时间: 2024-11-18 03:34:03
品牌 Logo 应用领域
飞索 - SPANSION /
页数 文件大小 规格书
251页 5244K
描述
Stacked Multi-Chip Product (MCP)

S73WS256NEEBAWT70 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:LFBGA,
针数:137Reach Compliance Code:compliant
HTS代码:8542.32.00.71风险等级:5.92
其他特性:MOBILE SDRAM IS ORGANIZED AS 4M X 16 X 4BANKS; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLEJESD-30 代码:R-PBGA-B137
JESD-609代码:e0长度:12 mm
内存密度:536870912 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:16功能数量:1
端子数量:137字数:33554432 words
字数代码:32000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-25 °C
组织:32MX16封装主体材料:PLASTIC/EPOXY
封装代码:LFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.4 mm
最大供电电压 (Vsup):1.95 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:9 mm

S73WS256NEEBAWT70 数据手册

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S73WS256N Based MCPs  
Stacked Multi-Chip Product (MCP)  
512/256 Megabit (32M/16M x 16-bit) CMOS 1.8 Volt-only,  
Simultaneous Read/Write, Burst Mode Flash Memory with  
256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM  
on Shared Data Bus  
ADVANCE  
INFORMATION  
Data Sheet  
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UHJDUGLQJꢀWKHꢀ6SDQVLRQꢀSURGXFWꢁVꢂꢀGHVFULEHGꢀKHUHLQꢃꢀ(DFKꢀSURGXFWꢀGHVFULEHG  
KHUHLQꢀPD\ꢀEHꢀGHVLJQDWHGꢀDVꢀ$GYDQFHꢀ,QIRUPDWLRQꢄꢀ3UHOLPLQDU\ꢀRUꢀ)XOO  
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Publication Number S73WS256N_00 Revision A Amendment 3 Issue Date December 16, 2005  

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