是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | 9 X 12 MM, 1.40 MM HEIGHT, LEAD FREE, FBGA-137 |
针数: | 137 | Reach Compliance Code: | unknown |
HTS代码: | 8542.32.00.71 | 风险等级: | 5.69 |
其他特性: | MOBILE SDRAM IS ORGANIZED AS 4M X 16 X 4BANKS; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | JESD-30 代码: | R-PBGA-B137 |
JESD-609代码: | e1 | 长度: | 12 mm |
内存密度: | 536870912 bit | 内存集成电路类型: | MEMORY CIRCUIT |
内存宽度: | 16 | 湿度敏感等级: | 3 |
功能数量: | 1 | 端子数量: | 137 |
字数: | 33554432 words | 字数代码: | 32000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -25 °C | 组织: | 32MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | LFBGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, LOW PROFILE, FINE PITCH |
峰值回流温度(摄氏度): | 260 | 认证状态: | Not Qualified |
座面最大高度: | 1.4 mm | 最大供电电压 (Vsup): | 1.95 V |
最小供电电压 (Vsup): | 1.7 V | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子面层: | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 40 |
宽度: | 9 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
S73WS256NEEBFWTB0 | SPANSION |
获取价格 |
Stacked Multi-Chip Product (MCP) | |
S73WS256NEEBFWTB2 | SPANSION |
获取价格 |
Stacked Multi-Chip Product (MCP) | |
S73WS256NEEBFWTB3 | SPANSION |
获取价格 |
Stacked Multi-Chip Product (MCP) | |
S73WS512PD0HF64V0 | SPANSION |
获取价格 |
Memory Circuit, 32MX16, CMOS, PBGA137, 9 X 12 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-137 | |
S73WS512PD0HF64V2 | SPANSION |
获取价格 |
Memory Circuit, 32MX16, CMOS, PBGA137, 9 X 12 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-137 | |
S73WS512PD0HF64V3 | SPANSION |
获取价格 |
Memory Circuit, 32MX16, CMOS, PBGA137, 9 X 12 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-137 | |
S73WS-P | SPANSION |
获取价格 |
Stacked Multi-Chip Product (MCP) | |
S7412M | ETC |
获取价格 |
35-A SILICON CONTROLLED RECTIFIERS | |
S742 | SSDI |
获取价格 |
1 Form A Solid State Relay | |
S742 | SSOUSA |
获取价格 |
1 Form A Solid State Relay |