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S72WS256ND0BFWB72 PDF预览

S72WS256ND0BFWB72

更新时间: 2024-01-07 06:08:39
品牌 Logo 应用领域
飞索 - SPANSION 内存集成电路存储
页数 文件大小 规格书
28页 1252K
描述
Memory Circuit, 16MX16, CMOS, PBGA137, 9 X 12 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-137

S72WS256ND0BFWB72 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:9 X 12 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-137
针数:137Reach Compliance Code:unknown
HTS代码:8542.32.00.71风险等级:5.84
其他特性:MOBILE SDRAM IS ORGANIZED AS 2M X 16BIT X 4 BANKS; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLEJESD-30 代码:R-PBGA-B137
JESD-609代码:e1长度:12 mm
内存密度:268435456 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:16湿度敏感等级:3
功能数量:1端子数量:137
字数:16777216 words字数代码:16000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-25 °C组织:16MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
宽度:9 mm

S72WS256ND0BFWB72 数据手册

 浏览型号S72WS256ND0BFWB72的Datasheet PDF文件第4页浏览型号S72WS256ND0BFWB72的Datasheet PDF文件第5页浏览型号S72WS256ND0BFWB72的Datasheet PDF文件第6页浏览型号S72WS256ND0BFWB72的Datasheet PDF文件第8页浏览型号S72WS256ND0BFWB72的Datasheet PDF文件第9页浏览型号S72WS256ND0BFWB72的Datasheet PDF文件第10页 
D a t a S h e e t ( A d v a n c e I n f o r m a t i o n )  
2. MCP Block Diagram  
2.1  
NOR Flash + ORNAND Flash + DRAM Products  
F-Vcc  
F-AVD#  
F-CLK  
AVD#  
CLK  
F-ACC  
ACC  
F-WP#  
F-RESET#  
F1-CE#  
F-WE#  
WP#  
RESET#  
CE#  
RDY  
DQ8:15  
DQ0:7  
RDY  
DQ8:15  
WE#  
OE#  
DQ0:7  
WS256N  
Vss  
F-OE#  
F-A23:A0  
F-VCCQ  
F2-CE#  
A23-A0  
CE#  
N-Vcc  
N-WP#  
N-CE#  
N-WE#  
N-RE#  
N-ALE  
N-CLE  
N-PRE  
WP#  
CE#  
WE#  
RE#  
ALE  
CLE  
PRE  
IO0:7  
MS01GP  
RY/BY#  
RY/BY#  
Vss  
D-Vcc  
V-Vccq  
A12-A0  
CE#  
D-A12-A0  
D-CE#  
DQ0:15  
D-DQ15-DQ0  
WE#  
BA0  
D-WE#  
D-BA0  
BA1  
CKE  
RAS#  
CAS#  
DM0  
DM1  
D-BA1  
D-CKE  
D-RAS#  
D-CAS#  
D-DM0  
D-DM1  
SDRAM  
D-Vss  
D-Vssq  
Notes  
1. For a one-Flash configuration, F1-CE# = CE#.  
For a two-Flash configuration, F1-CE# = CE for Flash 1 and F2-CE# = CE for Flash 2; F2-CE# is the chip-enable pin for the second Flash.  
2. If ORNAND is not present in the MCP, then the MS01GP block will not be present in the figure above. In that case, the common signals  
go only to the WS256N flash, while the SDRAM signals remain unchanged.  
3. If ORNAND supports a x16 bus, then NOR DQ0-DQ15 is shared with ORNAND I/O0-I/O15.  
May 8, 2007 S72WS-N_00_A9  
S72WS-N Based MCP/PoP Products  
7

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