Datasheet > S6X8BBSRP

S6X8BBSRP

更新时间： 2024-09-17 01:21:27

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	537K
描述
Thyristors EV Series 0.8 Amp Sensitive SCRs

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中文翻译

获取价格

数据手册

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S6X8BBSRP 数据手册

Thyristors

EV Series 0.8 Amp Sensitive SCRs

RoHS

SxX8BBS Series

Description

This new sensitive SCR component series offers 600V V_DRM

and 0.8A I_T(RMS)capability capability in the smallest package

size in the industry, SOT23. It is speciﬁcally designed for

GFCI (Ground Fault Circuit Interrupter) applications. All

SCRs junctions are glass-passivated to ensure long term

reliability and parametric stability.

Features

• Very compact SOT23 SMT

package

• Improved turn-off time (t_q)

< 25 μsec

• Surge current capability

up to 12A @ 60Hz

• Sensitive gate for direct

microprocessor interface

• Blocking voltage

• RoHS compliant and

Halogen-Free

Main Features

( V_DRM/ V_RRM

)

Symbol

Value

0.8

Unit

capability - up to 600V

I_T(RMS)

• High dv/dt noise immunity

_DRM/ V_RRM

I_GT

600

200

μA

Applications

The SxX8BBS series is speciﬁcally designed for GFCI

(Ground Fault Circuit Interrupter) and applications.

Schematic Symbol

Pin out

Anode

Cathode

Gate

Absolute Maximum Ratings

Symbol

Parameter

Value

Unit

_DSM/ V_RSM

Peak non-repetitive blocking voltage

RMS on-state current (full sine wave)

Average on-state current

Pw=100μs

700

0.8

I_T(RMS)

T_C= 80°C

I_T(AV)

T_C= 80°C

f= 50Hz

f= 60Hz

f= 50 Hz

f= 60 Hz

0.51

Non repetitive surge peak on-state current

(Single cycle, T_Jinitial = 25°C)

I_TSM

t_p= 10 ms

t_p= 8.3 ms

60 Hz

t_p= 20 μs

—

0.5

A²s

A/µs

I²t

I²t Value for fusing

0.6

di/dt

I_GM

Critical rate of rise of on-state current I_G= 10mA

Peak Gate Current

T_J= 125°C

—

1.0

P_G(AV)

T_stg

Average gate power dissipation

Storage junction temperature range

Operating junction temperature range

0.1

°C

—

-40 to 150

-40 to 125

T_J

—

Speciﬁcations are subject to change without notice.

Revised: 06/10/19

12 3 4 5 6

中文翻译

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