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S6N1RP75 PDF预览

S6N1RP75

更新时间: 2024-09-16 14:16:15
品牌 Logo 应用领域
力特 - LITTELFUSE 栅极
页数 文件大小 规格书
9页 270K
描述
Silicon Controlled Rectifier, 1A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, ROHS COMPLIANT, PLASTIC, COMPAK-2

S6N1RP75 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-LDSO-C3
针数:2Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.61
配置:SINGLE最大直流栅极触发电流:10 mA
JESD-30 代码:R-LDSO-C3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:GLASS封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
最大均方根通态电流:1 A断态重复峰值电压:600 V
重复峰值反向电压:600 V表面贴装:YES
端子面层:MATTE TIN端子形式:C BEND
端子位置:DUAL触发设备类型:SCR
Base Number Matches:1

S6N1RP75 数据手册

 浏览型号S6N1RP75的Datasheet PDF文件第2页浏览型号S6N1RP75的Datasheet PDF文件第3页浏览型号S6N1RP75的Datasheet PDF文件第4页浏览型号S6N1RP75的Datasheet PDF文件第5页浏览型号S6N1RP75的Datasheet PDF文件第6页浏览型号S6N1RP75的Datasheet PDF文件第7页 
                                                                
                                                                                       
Teccor® brandThyristors  
1 Amp Standard SCRs  
Sx01E & SxN1 Series  
Description  
Excellent for lower current heat, lamp, and audible alarm  
controls for home goods.  
Standard phase control SCRs are triggered with few  
milliamperes of current at less than 1.5V potential.  
Features & Benefits  
tꢀ  
tꢀ  
3P)4ꢀDPNQMJBOU  
tꢀ  
7PMUBHFꢀDBQBCJMJUZꢀVQꢀ  
to 600 V  
(MBTTꢀoꢀQBTTJWBUFEꢀ  
junctions  
tꢀ4VSHFꢀDBQBCJMJUZꢀVQꢀUPꢀ  
30 A  
Applications  
Main Features  
Typical applications are AC solid-state switches,  
fluidlevel sensors, strobes, and capacitive-discharge  
ignition systems.  
Symbol  
Value  
Unit  
A
IT(RMS)  
VDRM/VRRM  
IGT  
1
400 to 600  
10  
V
mA  
Schematic Symbol  
A
K
G
Absolute Maximum Ratings — Standard SCRs  
Symbol  
IT(RMS)  
IT(AV)  
Parameter  
Test Conditions  
TC = 90°C  
Value  
1
Unit  
A
RMS on-state current  
Average on-state current  
TC = 90°C  
0.64  
A
single half cycle; f = 50Hz;  
TJ (initial) = 25°C  
25  
30  
ITSM  
Peak non-repetitive surge current  
A
single half cycle; f = 60Hz;  
TJ (initial) = 25°C  
I2t  
I2t Value for fusing  
Critical rate of rise of on-state current  
Peak gate current  
tp = 8.3 ms  
f = 60Hz ;TJ = 125°C  
TJ = 125°C  
3.7  
50  
A2s  
A/μs  
A
di/dt  
IGM  
1.5  
PG(AV)  
Tstg  
TJ  
Average gate power dissipation  
Storage temperature range  
0.3  
W
TJ = 125°C  
-40 to 150  
-40 to 125  
°C  
Operating junction temperature range  
°C  
©2013 Littelfuse, Inc  
Specifications are subject to change without notice.  
209  
Sx01E & SxN1 Series  
Revised: 09/23/13  

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