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S3901-2048Q PDF预览

S3901-2048Q

更新时间: 2024-11-06 21:54:27
品牌 Logo 应用领域
HAMAMATSU 传感器图像传感器
页数 文件大小 规格书
4页 123K
描述
NMOS Linear image sensor

S3901-2048Q 技术参数

是否无铅: 含铅生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.64
阵列类型:LINEAR主体宽度:15.24 mm
主体高度:3 mm主体长度或直径:65 mm
安装特点:THROUGH HOLE MOUNT最高工作温度:65 °C
最低工作温度:-40 °C输出类型:ANALOG CURRENT
封装形状/形式:RECTANGULAR传感器/换能器类型:IMAGE SENSOR,NMOS
最大供电电压:10 V最小供电电压:4.5 V
表面贴装:NO端接类型:SOLDER
Base Number Matches:1

S3901-2048Q 数据手册

 浏览型号S3901-2048Q的Datasheet PDF文件第2页浏览型号S3901-2048Q的Datasheet PDF文件第3页浏览型号S3901-2048Q的Datasheet PDF文件第4页 
I M A G E S E N S O R  
NMOS linear image sensor  
,
S3901-1024Q S3904-2048Q  
Large active area type with 51.2 mm detection length  
NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning  
circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active  
area, high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. The current output type NMOS linear image sensors  
also feature excellent output linearity and wide dynamic range. S3901-1024Q uses photodiodes with a height of 2.5 mm, arrayed at a spacing of  
50 µm. S3904-2048Q has photodiodes with a height of 2.5 mm, arrayed at a spacing of 25 µm. The photodiode arrays are available in 2 different  
pixel quantities, 1024 (S3901-1024Q) and 2048 (S3904-2048Q). Quartz glass is the standard window material. Dedicated driver circuit C7615  
(sold separately) is also provided.  
Features  
Applications  
Large active area, long detection length  
Pixel pitch: 50 µm (S3901-1024Q)  
Multichannel spectrophotometry  
Image readout system  
25 µm (S3904-2048Q)  
Pixel height: 2.5 mm  
Active area length: 51.2 mm  
High UV sensitivity with good stability  
Low dark current and large saturation charge allow long  
integration time and a wide dynamic range at room temperature  
Excellent output linearity and sensitivity spatial uniformity  
Low power consumption: 1 mW Max.  
Start pulse and clock pulses are CMOS logic compatible  
Figure 1 Equivalent circuit  
Figure 2 Active area structure  
START st  
DIGITAL SHIFT RESISTER  
(MOS SHIFT RESISTER)  
END OF SCAN  
ACTIVE VIDEO  
CLOCK  
CLOCK  
1
2
ACTIVE  
PHOTODIODE  
b
Vss  
a
SATURATION  
CONTROL GATE  
SATURATION  
CONTROL DRAIN  
OXIDATION SILICON  
DUMMY VIDEO  
DUMMY DIODE  
KMPDC0020EA  
N TYPE SILICON  
P TYPE SILICON  
S3901-1024Q: a=50 µm, b=45 µm, c=2.5 mm  
S3904-2048Q: a=25 µm, b=20 µm, c=2.5 mm  
KMPDA0124EB  
Absolute maximum ratings  
Parameter  
Input pulse (φ1, φ2, φst) voltage  
Power consumption *1  
Operating temperature *2  
Storage temperature  
Symbol  
Vφ  
P
Topr  
Tstg  
Value  
15  
1
-40 to +65  
-40 to +85  
Unit  
V
mW  
°C  
°C  
*1: Vφ=5.0 V  
*2: No condensation  
1

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