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S3901-FX_15 PDF预览

S3901-FX_15

更新时间: 2024-11-08 01:24:23
品牌 Logo 应用领域
HAMAMATSU /
页数 文件大小 规格书
3页 105K
描述
Image sensor highly sensitive to X-rays from 10 k to 100 keV

S3901-FX_15 数据手册

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I M A G E S E N S O R  
NMOS linear image sensor  
S3901-FX series  
Image sensor highly sensitive to X-rays from 10 k to 100 keV  
NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning  
circuit is made up of N-channel MOS transistors, has low power consumption and is easy to handle. Each photodiode has a large active area,  
high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. Current output type NMOS linear image sensors also offer  
excellent output linearity and wide dynamic range.  
S3901-FX series image sensors are variants of S3901-F series NMOS image sensors. Having a phosphor-coated fiber optic plate (FOP) as the  
light input window, the S3901-FX series was developed for detection of X-rays and electrons. The S3901-FX offers particularly high sensitivity to  
X-rays from 10 k to 100 keV. The phosphor material used is gadolinium ox sulfide (Gd  
provide optimum sensitivity and resolution with a peak emission at 550 nm wavelength.  
2O2S·Tb) whose composition is carefully selected to  
The S3901-FX series active area consists of a photodiode array with pixels formed at 50 µm pitches and a height of 2.5 mm. The number of pixels  
can be selected from 256 or 512.  
Hamamatsu S3904 series NMOS linear image sensors are also available with FOP windows coated with the same phosphor material as S3901-  
FX series.  
Using photodiodes with no phosphor and FOP window also allows direct detection of X-rays at energy levels below 10 keV.  
Features  
Applications  
Wide active area  
Pixel pitch: 50 µm  
Pixel height: 2.5 mm  
Test equipment using X-ray and electron beam transmission  
X-ray non-destructive inspection  
X-ray and electron beam detector  
Low dark current and high saturation charge allow a  
long integration time and a wide dynamic range at room  
temperature  
Excellent output linearity and sensitivity spatial uniformity  
Low power consumption: 1 mW max.  
Start pulse and clock pulse are CMOS logic compatible  
Equivalent circuit  
Active area structure  
Start st  
Degital shift register  
(MOS shift register)  
End of scan  
Active video  
Clock  
Clock  
1
2
Active  
photodiode  
45 µm  
50 µm  
Vss  
Saturation  
control gate  
Saturation  
control drain  
Phosphor material  
Dummy video  
Fiber optic plate  
Dummy diode  
Oxidation silicon  
KMPDC0020EA  
N type silicon  
P type silicon  
KMPDC0008EA  
Absolute maximum ratings  
Parameter  
Symbol  
Vφ  
P
Topr  
Tstg  
Value  
15  
1
-30 to +60  
-40 to +80  
Unit  
V
mW  
°C  
Input pulse (φ1, φ2, φst) voltage  
Power consumption*1  
Operating temperature*2  
Storage temperature  
°C  
*1: Vφ=5.0 V  
*2: No condensation  
1

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