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S3901-F_15 PDF预览

S3901-F_15

更新时间: 2022-02-26 14:32:17
品牌 Logo 应用领域
HAMAMATSU /
页数 文件大小 规格书
4页 143K
描述
NMOS linear image sensor

S3901-F_15 数据手册

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I M A G E S E N S O R  
NMOS linear image sensor  
S3901/S3904-F series  
NMOS linear image sensors with fiber optic windows  
NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning  
circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active  
area, high sensitivity yet very low noise, delivering a high S/N even at low light levels.  
S3901/S3904-F series are current-output type NMOS linear image sensors with fiber optic windows and feature superior output linearity and wide  
dynamic range. The fiber optic windows allow efficient optical coupling to an image device such as image intensifiers suitable for low-light-level  
detection.  
The photodiodes of S3901-F series have a height of 2.5 mm and are arrayed in a row at a spacing of 50 µm. The photodiodes of S3904-F series  
also have a height of 2.5 mm but are arrayed at a spacing of 25 µm. The photodiodes are available in 2 different pixel quantities for each series:  
256 (S3901-256F), 512 (S3901-512F, S3904-512F), 1024 (S3904-1024F).  
Features  
Applications  
Wide active area  
Pixel pitch: 50 µm (S3901-F series)  
Multichannel spectrophotometry  
Image readout system  
25 µm (S3904-F series)  
Pixel height: 2.5 mm  
Low dark current and high saturation charge allow a long  
integration time and a wide dynamic range at room temperature  
Excellent output linearity and sensitivity spatial uniformity  
Lower power consumption: 1 mW max.  
Start pulse and clock pulses are CMOS logic compatible  
Equivalent circuit  
Active area structure  
Start st  
Digital shift register  
(MOS shift register)  
End of scan  
Active video  
Clock  
Clock  
1
2
Active  
photodiode  
b
Vss  
a
Saturation  
control gate  
Saturation  
control drain  
Dummy video  
Fiber optic plate  
Dummy diode  
Oxidation silicon  
N type silicon  
P type silicon  
KMPDC0020EA  
S3901-F series: a=50 µm, b=45 µm  
S3904-F series: a=25 µm, b=20 µm  
KMPDA0131EA  
Absolute maximum ratings  
Parameter  
Input pulse (φ1, φ2, φst) voltage  
Power consumption*1  
Operating temperature*2  
Symbol  
Vφ  
P
Topr  
Tstg  
Value  
15  
1
-40 to +65  
-40 to +85  
Unit  
V
mW  
°C  
Storage temperature  
°C  
*1: Vφ=5.0 V  
*2: No condensation  
1

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