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S3901-FX PDF预览

S3901-FX

更新时间: 2024-11-07 03:34:27
品牌 Logo 应用领域
HAMAMATSU 传感器图像传感器
页数 文件大小 规格书
3页 144K
描述
NMOS linear image sensor

S3901-FX 数据手册

 浏览型号S3901-FX的Datasheet PDF文件第2页浏览型号S3901-FX的Datasheet PDF文件第3页 
I M A G E S E N S O R  
NMOS linear image sensor  
S3901-FX series  
Image sensor highly sensitive to X-rays from 10 k to 100 keV  
NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning  
circuit is made up of N-channel MOS transistors, has low power consumption and is easy to handle. Each photodiode has a large active area,  
high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. Current output type NMOS linear image sensors also offer  
excellent output linearity and wide dynamic range.  
S3901-FX series image sensors are variants of S3901-F series NMOS image sensors. Having a phosphor-coated fiber optic plate (FOP) as the  
light input window, the S3901-FX series was developed for detection of X-rays and electrons. The S3901-FX offers particularly high sensitivity to  
X-rays from 10 k to 100 keV. The phosphor material used is gadolinium ox sulfide (Gd  
provide optimum sensitivity and resolution with a peak emission at 550 nm wavelength.  
2O2S·Tb) whose composition is carefully selected to  
The S3901-FX series active area consists of a photodiode array with pixels formed at 50 µm pitches and a height of 2.5 mm. The number of pixels  
can be selected from 256 or 512.  
Hamamatsu S3902/S3903/S3904 series NMOS linear image sensors are also available with FOP windows coated with the same phosphor  
material as S3901-FX series.  
Using photodiodes with no phosphor and FOP window also allows direct detection of X-rays at energy levels below 10 keV.  
Features  
Applications  
Wide active area  
Pixel pitch: 50 µm  
Pixel height: 2.5 mm  
Test equipment using X-ray and electron beam transmission  
X-ray non-destructive inspection  
X-ray and electron beam detector  
Low dark current and high saturation charge allow a  
long integration time and a wide dynamic range at room  
temperature  
Excellent output linearity and sensitivity spatial uniformity  
Low power consumption: 1 mW Max.  
Start pulse and clock pulse are CMOS logic compatible  
Figure 1 Equivalent circuit  
Figure 2 Active area structure  
START st  
DIGITAL SHIFT REGISTER  
(MOS SHIFT REGISTER)  
END OF SCAN  
ACTIVE VIDEO  
CLOCK  
CLOCK  
1
2
ACTIVE  
PHOTODIODE  
45 µm  
50 µm  
Vss  
SATURATION  
CONTROL GATE  
SATURATION  
CONTROL DRAIN  
PHOSPHOR MATERIAL  
DUMMY VIDEO  
FIBER OPTIC PLATE  
DUMMY DIODE  
OXIDATION SILICON  
KMPDC0020EA  
N TYPE SILICON  
P TYPE SILICON  
KMPDC0008EA  
Absolute maximum ratings  
Parameter  
Symbol  
Vφ  
Value  
15  
Unit  
V
Input pulse (φ1, φ2, φst) voltage  
Power consumption *1  
Operating temperature *2  
Storage temperature  
P
1
mW  
°C  
Topr  
Tstg  
-30 to +60  
-40 to +80  
°C  
*1: Vφ=5.0 V  
*2: No condensation  

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