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S29WS128N0SBFW013 PDF预览

S29WS128N0SBFW013

更新时间: 2024-11-04 22:59:07
品牌 Logo 应用领域
飞索 - SPANSION 闪存
页数 文件大小 规格书
99页 921K
描述
256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY

S29WS128N0SBFW013 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:11.60 X 8 MM, LEAD FREE, PLASTIC, FBGA-84
针数:84Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.73最长访问时间:70 ns
其他特性:SYNCHRONOUS BURST MODE OPERATION POSSIBLE启动块:BOTTOM/TOP
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PBGA-B84
JESD-609代码:e1长度:11.6 mm
内存密度:134217728 bit内存集成电路类型:FLASH
内存宽度:16湿度敏感等级:3
功能数量:1部门数/规模:8,126
端子数量:84字数:8388608 words
字数代码:8000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-25 °C
组织:8MX16封装主体材料:PLASTIC/EPOXY
封装代码:VFBGA封装等效代码:BGA84,10X12,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:1.8 V编程电压:1.8 V
认证状态:Not Qualified座面最大高度:1 mm
部门规模:16K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.066 mA
最大供电电压 (Vsup):1.95 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子面层:Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:40切换位:YES
类型:NOR TYPE宽度:8 mm
Base Number Matches:1

S29WS128N0SBFW013 数据手册

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ADVANCE  
INFORMATION  
S29WS-N MirrorBit™ Flash Family  
S29WS256N, S29WS128N, S29WS064N  
256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only  
Simultaneous Read/Write, Burst Mode Flash Memory  
Data Sheet  
Notice to Readers: The Advance Information status indicates that this  
document contains information on one or more products under development  
at Spansion LLC. The information is intended to help you evaluate this product.  
Do not design in this product without contacting the factory. Spansion LLC  
reserves the right to change or discontinue work on this proposed product  
without notice.  
Publication Number S29WS-N_00 Revision G Amendment 0 Issue Date January 25, 2005  

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