5秒后页面跳转
S29WS128N0SBFW112 PDF预览

S29WS128N0SBFW112

更新时间: 2024-11-04 22:59:07
品牌 Logo 应用领域
飞索 - SPANSION 闪存存储内存集成电路
页数 文件大小 规格书
99页 921K
描述
256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY

S29WS128N0SBFW112 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:BGA包装说明:11.60 X 8 MM, LEAD FREE, PLASTIC, FBGA-84
针数:84Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.73Is Samacsys:N
最长访问时间:70 ns其他特性:SYNCHRONOUS BURST MODE OPERATION POSSIBLE
启动块:BOTTOM/TOP命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PBGA-B84JESD-609代码:e1
长度:11.6 mm内存密度:134217728 bit
内存集成电路类型:FLASH内存宽度:16
湿度敏感等级:3功能数量:1
部门数/规模:8,126端子数量:84
字数:8388608 words字数代码:8000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-25 °C组织:8MX16
封装主体材料:PLASTIC/EPOXY封装代码:VFBGA
封装等效代码:BGA84,10X12,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:1.8 V
编程电压:1.8 V认证状态:Not Qualified
座面最大高度:1 mm部门规模:16K,64K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.066 mA最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
切换位:YES类型:NOR TYPE
宽度:8 mmBase Number Matches:1

S29WS128N0SBFW112 数据手册

 浏览型号S29WS128N0SBFW112的Datasheet PDF文件第2页浏览型号S29WS128N0SBFW112的Datasheet PDF文件第3页浏览型号S29WS128N0SBFW112的Datasheet PDF文件第4页浏览型号S29WS128N0SBFW112的Datasheet PDF文件第5页浏览型号S29WS128N0SBFW112的Datasheet PDF文件第6页浏览型号S29WS128N0SBFW112的Datasheet PDF文件第7页 
ADVANCE  
INFORMATION  
S29WS-N MirrorBit™ Flash Family  
S29WS256N, S29WS128N, S29WS064N  
256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only  
Simultaneous Read/Write, Burst Mode Flash Memory  
Data Sheet  
Notice to Readers: The Advance Information status indicates that this  
document contains information on one or more products under development  
at Spansion LLC. The information is intended to help you evaluate this product.  
Do not design in this product without contacting the factory. Spansion LLC  
reserves the right to change or discontinue work on this proposed product  
without notice.  
Publication Number S29WS-N_00 Revision G Amendment 0 Issue Date January 25, 2005  

与S29WS128N0SBFW112相关器件

型号 品牌 获取价格 描述 数据表
S29WS128N0SBFW113 SPANSION

获取价格

256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0SBFW113 CYPRESS

获取价格

Flash, 8MX16, 70ns, PBGA84, 11.60 X 8 MM, LEAD FREE, PLASTIC, FBGA-84
S29WS128P SPANSION

获取价格

MirrorBit㈢ Flash Family 512/256/128 Mb (32/16
S29WS128P0LBAW000 SPANSION

获取价格

512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Me
S29WS128P0LBAW002 SPANSION

获取价格

512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Me
S29WS128P0LBAW003 SPANSION

获取价格

512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Me
S29WS128P0LBFW000 SPANSION

获取价格

512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Me
S29WS128P0LBFW002 SPANSION

获取价格

512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Me
S29WS128P0LBFW003 SPANSION

获取价格

512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Me
S29WS128P0LBFW200 CYPRESS

获取价格

Flash, 8MX16, 80ns, PBGA84, FBGA-84