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S29CD032J0RQFM013 PDF预览

S29CD032J0RQFM013

更新时间: 2024-11-07 14:38:31
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 内存集成电路闪存
页数 文件大小 规格书
74页 1340K
描述
Flash, 1MX32, 48ns, PQFP80, QFP-80

S29CD032J0RQFM013 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:QFP-80Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.24Is Samacsys:N
最长访问时间:48 ns其他特性:SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK
启动块:BOTTOM命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PQFP-G80JESD-609代码:e3
长度:20 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:32
湿度敏感等级:3功能数量:1
部门数/规模:16,62端子数量:80
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:1MX32
封装主体材料:PLASTIC/EPOXY封装代码:QFP
封装等效代码:QFP80,.7X.9,32封装形状:RECTANGULAR
封装形式:FLATPACK并行/串行:PARALLEL
电源:1.8/2.6,2.6 V编程电压:2.7 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:3.35 mm部门规模:2K,16K
最大待机电流:0.00006 A子类别:Flash Memories
最大压摆率:0.09 mA最大供电电压 (Vsup):2.75 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):2.6 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.8 mm
端子位置:QUAD切换位:YES
类型:NOR TYPE宽度:14 mm
Base Number Matches:1

S29CD032J0RQFM013 数据手册

 浏览型号S29CD032J0RQFM013的Datasheet PDF文件第2页浏览型号S29CD032J0RQFM013的Datasheet PDF文件第3页浏览型号S29CD032J0RQFM013的Datasheet PDF文件第4页浏览型号S29CD032J0RQFM013的Datasheet PDF文件第5页浏览型号S29CD032J0RQFM013的Datasheet PDF文件第6页浏览型号S29CD032J0RQFM013的Datasheet PDF文件第7页 
S29CD032J  
S29CD016J  
S29CL032J  
S29CL016J  
32/16 Mbit, 2.6/3.3 V, Dual Boot,  
Simultaneous Read/Write, Burst Flash  
General Description  
The Cypress S29CD-J and S29CL-J devices are Floating Gate products fabricated in 110-nm process technology. These burst-  
mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks,  
using separate data and address pins. These products can operate up to 75 MHz (32 Mb) or 66 MHz (16 Mb), and use a single VCC  
of 2.5V to 2.75V (S29CD-J) or 3.0V to 3.6V (S29CL-J) that make them ideal for today’s demanding automotive applications.  
Distinctive Characteristics  
Single 2.6V (S29CD-J) or 3.3V (S29CL-J) for read/program/  
Supports Common Flash Interface (CFI)  
Extended Temperature range  
erase  
110 nm Floating Gate Technology  
Simultaneous Read/Write operation with zero latency  
x32 Data Bus  
Persistent and Password methods of Advanced Sector  
Protection  
Unlock Bypass program command to reduce programming  
time  
Dual Boot Sector Configuration (top and bottom)  
ACC input pin to reduce factory programming time  
Flexible Sector Architecture  
Data Polling bits indicate program and erase operation  
– CD016J and CL016J: Eight 2k Double word, Thirty 16k  
Double word, and Eight 2k Double Word sectors  
– CD032J and CL032J: Eight 2k Double word, Sixty-two 16k  
Double Word, and Eight 2k Double Word sectors  
completion  
Hardware (WP#) protection of two outermost sectors in the  
large bank  
VersatileI/O™ control (1.65V to 3.6V)  
Ready/Busy (RY/BY#) output indicates data available to  
system  
Programmable Burst Interface  
Suspend and Resume commands for Program and Erase  
– Linear for 2, 4, and 8 double word burst with wrap around  
Operation  
Secured Silicon Sector that can be either factory or  
Offered Packages  
customer locked  
– 80-pin PQFP  
20 year data retention (typical)  
– 80-ball Fortified BGA (13 x 11 mm and 11 x 9mm versions)  
– Pb-free package option available  
– Known Good Die  
Cycling Endurance: 1 million write cycles per sector (typical)  
Command set compatible with JEDEC (JC42.4) standard  
Cypress Semiconductor Corporation  
Document Number: 002-00948 Rev. *C  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised November 08, 2017  

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