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S29CD032J0RQFN110 PDF预览

S29CD032J0RQFN110

更新时间: 2024-11-07 19:19:03
品牌 Logo 应用领域
飞索 - SPANSION 内存集成电路
页数 文件大小 规格书
76页 1855K
描述
Flash, 1MX32, 48ns, PQFP80, LEAD FREE, PLASTIC, MO-108CB-1, QFP-80

S29CD032J0RQFN110 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:QFP包装说明:QFP,
针数:80Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.07Is Samacsys:N
最长访问时间:48 ns其他特性:SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK
启动块:BOTTOMJESD-30 代码:R-PQFP-G80
JESD-609代码:e3长度:20 mm
内存密度:33554432 bit内存集成电路类型:FLASH
内存宽度:32湿度敏感等级:3
功能数量:1端子数量:80
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:1MX32
封装主体材料:PLASTIC/EPOXY封装代码:QFP
封装形状:RECTANGULAR封装形式:FLATPACK
并行/串行:PARALLEL峰值回流温度(摄氏度):260
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:3.35 mm最大供电电压 (Vsup):2.75 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):2.6 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.8 mm
端子位置:QUAD处于峰值回流温度下的最长时间:40
类型:NOR TYPE宽度:14 mm
Base Number Matches:1

S29CD032J0RQFN110 数据手册

 浏览型号S29CD032J0RQFN110的Datasheet PDF文件第2页浏览型号S29CD032J0RQFN110的Datasheet PDF文件第3页浏览型号S29CD032J0RQFN110的Datasheet PDF文件第4页浏览型号S29CD032J0RQFN110的Datasheet PDF文件第5页浏览型号S29CD032J0RQFN110的Datasheet PDF文件第6页浏览型号S29CD032J0RQFN110的Datasheet PDF文件第7页 
S29CD-J & S29CL-J Flash Family  
S29CD032J, S29CD016J, S29CL032J, S29CL016J  
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only  
Simultaneous Read/Write, Dual Boot, Burst Mode  
Flash Memory with VersatileI/O™  
S29CD-J  
& S29CL-J Flash Family Cover Sheet  
Data Sheet (Preliminary)  
Notice to Readers: This document states the current technical specifications regarding the Spansion  
product(s) described herein. The Preliminary status of this document indicates that product qualification has  
been completed, and that initial production has begun. Due to the phases of the manufacturing process that  
require maintaining efficiency and quality, this document may be revised by subsequent versions or  
modifications due to changes in technical specifications.  
Publication Number S29CD-J_CL-J_00  
Revision B  
Amendment 1  
Issue Date September 27, 2006  

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