5秒后页面跳转
捷配首页

Datasheet > S29CD032J1JFAI003
S29CD032J1JFAI003 PDF预览

S29CD032J1JFAI003

更新时间： 2024-11-07 20:58:55
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 内存集成电路闪存
页数 文件大小 规格书
86页 1342K
描述
Flash, 1MX32, 54ns, PBGA80, BGA-80

阅读下载

中文翻译

获取价格

S29CD032J1JFAI003 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：BGA-80Reach Compliance Code：compliant
ECCN代码：3A991.B.1.AHTS代码：8542.32.00.51
风险等级：5.06最长访问时间：54 ns
其他特性：SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK启动块：TOP
命令用户界面：YES通用闪存接口：YES
数据轮询：YESJESD-30 代码：R-PBGA-B80
JESD-609代码：e0长度：13 mm
内存密度：33554432 bit内存集成电路类型：FLASH
内存宽度：32湿度敏感等级：3
功能数量：1部门数/规模：16,62
端子数量：80字数：1048576 words
字数代码：1000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：1MX32封装主体材料：PLASTIC/EPOXY
封装代码：LBGA封装等效代码：BGA80,8X10,40
封装形状：RECTANGULAR封装形式：GRID ARRAY, LOW PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：240
电源：1.8/2.6,2.6 V编程电压：2.7 V
认证状态：Not Qualified就绪/忙碌：YES
座面最大高度：1.4 mm部门规模：2K,16K
最大待机电流：0.00006 A子类别：Flash Memories
最大压摆率：0.09 mA最大供电电压 (Vsup)：2.75 V
最小供电电压 (Vsup)：2.5 V标称供电电压 (Vsup)：2.6 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：BALL端子节距：1 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：30
切换位：YES类型：NOR TYPE
宽度：11 mmBase Number Matches：1

S29CD032J1JFAI003 数据手册

 浏览型号S29CD032J1JFAI003的Datasheet PDF文件第2页浏览型号S29CD032J1JFAI003的Datasheet PDF文件第3页浏览型号S29CD032J1JFAI003的Datasheet PDF文件第4页浏览型号S29CD032J1JFAI003的Datasheet PDF文件第5页浏览型号S29CD032J1JFAI003的Datasheet PDF文件第6页浏览型号S29CD032J1JFAI003的Datasheet PDF文件第7页 
S29CD032J  
S29CD016J  
S29CL032J  
S29CL016J  
32/16 Mbit, 2.6/3.3 V, Dual Boot,  
Simultaneous Read/Write, Burst Flash  
General Description  
The Spansion S29CD-J and S29CL-J devices are Floating Gate products fabricated in 110-nm process technology. These burst-  
mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks,  
using separate data and address pins. These products can operate up to 75 MHz (32 Mb) or 66 MHz (16 Mb), and use a single VCC  
of 2.5V to 2.75V (S29CD-J) or 3.0V to 3.6V (S29CL-J) that make them ideal for today’s demanding automotive applications.  
Distinctive Characteristics  
Single 2.6V (S29CD-J) or 3.3V (S29CL-J) for read/program/erase  
110 nm Floating Gate Technology  
Command set compatible with JEDEC (JC42.4) standard  
Supports Common Flash Interface (CFI)  
Simultaneous Read/Write operation with zero latency  
x32 Data Bus  
Extended Temperature range  
Persistent and Password methods of Advanced Sector Protection  
Unlock Bypass program command to reduce programming time  
ACC input pin to reduce factory programming time  
Data Polling bits indicate program and erase operation completion  
Dual Boot Sector Configuration (top and bottom)  
Flexible Sector Architecture  
– CD016J and CL016J: Eight 2k Double word, Thirty 16k Double  
word, and Eight 2k Double Word sectors  
Hardware (WP#) protection of two outermost sectors in the large  
– CD032J and CL032J: Eight 2k Double word, Sixty-two 16k  
Double Word, and Eight 2k Double Word sectors  
bank  
Ready/Busy (RY/BY#) output indicates data available to system  
Suspend and Resume commands for Program and Erase Operation  
Offered Packages  
VersatileI/O™ control (1.65V to 3.6V)  
Programmable Burst Interface  
– Linear for 2, 4, and 8 double word burst with wrap around  
Secured Silicon Sector that can be either factory or customer locked  
20 year data retention (typical)  
– 80-pin PQFP  
– 80-ball Fortified BGA (13 x 11 mm and 11 x 9mm versions)  
– Pb-free package option available  
Cycling Endurance: 1 million write cycles per sector (typical)  
– Known Good Die  
Performance Characteristics  
Read Access Times  
Current Consumption (Max values)  
75  
Continuous Burst Read @ 75 MHz  
90 mA  
50 mA  
50 mA  
60 µA  
Speed Option (MHz)  
66  
56  
40  
(32 Mb only)  
Program  
Max Asynch. Access Time, ns (t  
)
54  
8
54  
8
54  
8
54  
8
ACC  
Erase  
Max Synch. Burst Access, ns (t  
)
BACC  
Standby Mode  
Min Initial Clock Delay (clock cycles)  
Max CE# Access Time, ns (t  
5
5
5
4
)
54  
20  
54  
20  
54  
20  
54  
20  
CE  
Typical Program and Erase Times  
Max OE# Access time, ns (t  
)
OE  
Double Word Programming  
Sector Erase  
18 µs  
1.0 s  
Notice for the 32Mb S29CD-J and S29CL-J devices only:  
Please refer to the application note “Recommended Mode of Operation for Spansion® 110 nm S29CD032J/S29CL032J Flash  
Memory” publication number S29CD-CL032J_Recommend_AN for programming best practices.  
Cypress Semiconductor Corporation  
Document Number: 002-00948 Rev. *A  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised December 16, 2015  
1234567...86

中文翻译

下载PDF

与S29CD032J1JFAI003相关器件

型号 品牌 获取价格 描述 数据表
S29CD032J1JFAI012 CYPRESS

获取价格

 		Flash, 1MX32, 54ns, PBGA80, BGA-80
S29CD032J1JFAI013 SPANSION

获取价格

 		Flash, 1MX32, 54ns, PBGA80, 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80
S29CD032J1JFAI020 CYPRESS

获取价格

 		Flash, 1MX32, 54ns, PBGA80, BGA-80
S29CD032J1JFAI022 CYPRESS

获取价格

 		Flash, 1MX32, 54ns, PBGA80, BGA-80
S29CD032J1JFAI023 CYPRESS

获取价格

 		Flash, 1MX32, 54ns, PBGA80, BGA-80
S29CD032J1JFAI030 CYPRESS

获取价格

 		Flash, 1MX32, 54ns, PBGA80, BGA-80
S29CD032J1JFAI032 CYPRESS

获取价格

 		Flash, 1MX32, 54ns, PBGA80, BGA-80
S29CD032J1JFAI033 SPANSION

获取价格

 		32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mod
S29CD032J1JFAI100 SPANSION

获取价格

 		32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mod
S29CD032J1JFAI102 SPANSION

获取价格

 		32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mod

与S29CD032J1JFAI003相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证