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S29CD032J1JDGH014 PDF预览

S29CD032J1JDGH014

更新时间： 2024-11-08 04:54:55
品牌 Logo 应用领域
飞索 - SPANSION /
页数 文件大小 规格书
17页 690K
描述
Flash, 1MX32, 54ns, DIE-75

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S29CD032J1JDGH014 数据手册

 浏览型号S29CD032J1JDGH014的Datasheet PDF文件第2页浏览型号S29CD032J1JDGH014的Datasheet PDF文件第3页浏览型号S29CD032J1JDGH014的Datasheet PDF文件第4页浏览型号S29CD032J1JDGH014的Datasheet PDF文件第5页浏览型号S29CD032J1JDGH014的Datasheet PDF文件第6页浏览型号S29CD032J1JDGH014的Datasheet PDF文件第7页 
S29CD032J/S29CL032J  
Known Good Die  
32 Megabit (1M x 32-Bit) CMOS 2.6 or 3.3 Volt-only  
Burst Mode, Dual Boot,  
Simultaneous Read/Write Flash Memory with VersatileI/O™  
Supplement (Preliminary)  
General Description  
The Spansion S29CD032J and S29CL032J devices are Floating Gate products fabricated in 110 nm process technology.  
These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two  
separate banks. These products can operate up to 56 MHz and use a single VCC of 2.5 V to 2.75 V (S29CD-J) or 3.0 V to 3.6 V  
(S29CL-J) that make them ideal for today’s demanding automotive applications.  
Distinctive Characteristics  
„ Single 2.6 V (S29CD-J) or 3.3 V (S29CL-J) for read/program/  
„ Cycling Endurance: 1,000,000 write cycles per sector  
erase  
(typical)  
„ 110 nm Floating Gate Technology  
„ Simultaneous Read/Write operation with zero latency  
„ x32 Data Bus  
„ Command set compatible with JEDEC (JC42.4) standard  
„ Supports Common Flash Interface (CFI)  
„ Persistent and Password methods of Advanced Sector  
Protection  
„ Dual Boot Sector Configuration (top and bottom)  
„ Flexible Sector Architecture  
„ Unlock Bypass program command to reduce programming  
time  
– CD032J & CL032J: Eight 2K Double word, Sixty-two 16K Double  
word, and Eight 2K Double Word sectors  
„ Write operation status bits indicate program and erase  
operation completion  
„ VersatileI/O™ control (1.65 V to VCC  
„ Programmable Burst Interface  
)
„ Hardware (WP#) protection of two outermost sectors in the  
large bank  
– Linear for 2, 4, and 8 double word burst with wrap around  
„ Ready/Busy (RY/BY#) output indicates data available to  
„ Secured Silicon Sector that can be either factory or customer  
system  
locked  
„ Suspend and Resume commands for Program and Erase  
„ 20 year data retention (typical)  
Operation  
Performance Characteristics  
Read Access Times  
Current Consumption (Max values)  
Speed Option (MHz)  
56  
54  
54  
8
40  
54  
54  
8
Continuous Burst Read @ 56 MHz  
90 mA  
50 mA  
50 mA  
60 µA  
Max Asynch. Access Time, ns (tACC  
)
Program  
Max Synch. Latency, ns (tIACC  
Max Synch. Burst Access, ns (tBACC  
Max CE# Access Time, ns (tCE  
Max OE# Access time, ns (tOE  
)
Erase  
)
Standby Mode  
)
54  
20  
54  
20  
)
Typical Program and Erase Times  
Double Word Programming  
Sector Erase  
18 µs  
1.0 s  
Publication Number S29CD032J-CL032J_KGD_SP  
Revision 01  
Issue Date March 9, 2009  
This document states the current technical specifications regarding the Spansion product(s) described herein. The Preliminary status of this document indicates that product qual-  
ification has been completed, and that initial production has begun. Due to the phases of the manufacturing process that require maintaining efficiency and quality, this document  
may be revised by subsequent versions or modifications due to changes in technical specifications.  
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S29CD032J1JFAI000 SPANSION

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 		32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mod
S29CD032J1JFAI003 SPANSION

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 		32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mod
S29CD032J1JFAI003 CYPRESS

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 		Flash, 1MX32, 54ns, PBGA80, BGA-80
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 		Flash, 1MX32, 54ns, PBGA80, BGA-80
S29CD032J1JFAI013 SPANSION

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 		Flash, 1MX32, 54ns, PBGA80, 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80
S29CD032J1JFAI020 CYPRESS

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 		Flash, 1MX32, 54ns, PBGA80, BGA-80
S29CD032J1JFAI022 CYPRESS

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 		Flash, 1MX32, 54ns, PBGA80, BGA-80

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