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S29CD016J0MFFI010 PDF预览

S29CD016J0MFFI010

更新时间： 2024-02-27 15:11:53
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 内存集成电路闪存
页数 文件大小 规格书
86页 1342K
描述
Flash, 512KX32, 54ns, PBGA80, BGA-80

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S29CD016J0MFFI010 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：LBGA, BGA80,8X10,40Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.04Is Samacsys：N
最长访问时间：54 ns其他特性：SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK
启动块：BOTTOM命令用户界面：YES
通用闪存接口：YES数据轮询：YES
JESD-30 代码：R-PBGA-B80JESD-609代码：e1
长度：13 mm内存密度：16777216 bit
内存集成电路类型：FLASH内存宽度：32
湿度敏感等级：3功能数量：1
部门数/规模：16,30端子数量：80
字数：524288 words字数代码：512000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：512KX32
封装主体材料：PLASTIC/EPOXY封装代码：LBGA
封装等效代码：BGA80,8X10,40封装形状：RECTANGULAR
封装形式：GRID ARRAY, LOW PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：260电源：1.8/2.6,2.6 V
编程电压：2.7 V认证状态：Not Qualified
就绪/忙碌：YES座面最大高度：1.4 mm
部门规模：2K,16K最大待机电流：0.00006 A
子类别：Flash Memories最大压摆率：0.09 mA
最大供电电压 (Vsup)：2.75 V最小供电电压 (Vsup)：2.5 V
标称供电电压 (Vsup)：2.6 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)端子形式：BALL
端子节距：1 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：40切换位：YES
类型：NOR TYPE宽度：11 mm
Base Number Matches：1

S29CD016J0MFFI010 数据手册

 浏览型号S29CD016J0MFFI010的Datasheet PDF文件第2页浏览型号S29CD016J0MFFI010的Datasheet PDF文件第3页浏览型号S29CD016J0MFFI010的Datasheet PDF文件第4页浏览型号S29CD016J0MFFI010的Datasheet PDF文件第5页浏览型号S29CD016J0MFFI010的Datasheet PDF文件第6页浏览型号S29CD016J0MFFI010的Datasheet PDF文件第7页 
S29CD032J  
S29CD016J  
S29CL032J  
S29CL016J  
32/16 Mbit, 2.6/3.3 V, Dual Boot,  
Simultaneous Read/Write, Burst Flash  
General Description  
The Spansion S29CD-J and S29CL-J devices are Floating Gate products fabricated in 110-nm process technology. These burst-  
mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks,  
using separate data and address pins. These products can operate up to 75 MHz (32 Mb) or 66 MHz (16 Mb), and use a single VCC  
of 2.5V to 2.75V (S29CD-J) or 3.0V to 3.6V (S29CL-J) that make them ideal for today’s demanding automotive applications.  
Distinctive Characteristics  
Single 2.6V (S29CD-J) or 3.3V (S29CL-J) for read/program/erase  
110 nm Floating Gate Technology  
Command set compatible with JEDEC (JC42.4) standard  
Supports Common Flash Interface (CFI)  
Simultaneous Read/Write operation with zero latency  
x32 Data Bus  
Extended Temperature range  
Persistent and Password methods of Advanced Sector Protection  
Unlock Bypass program command to reduce programming time  
ACC input pin to reduce factory programming time  
Data Polling bits indicate program and erase operation completion  
Dual Boot Sector Configuration (top and bottom)  
Flexible Sector Architecture  
– CD016J and CL016J: Eight 2k Double word, Thirty 16k Double  
word, and Eight 2k Double Word sectors  
Hardware (WP#) protection of two outermost sectors in the large  
– CD032J and CL032J: Eight 2k Double word, Sixty-two 16k  
Double Word, and Eight 2k Double Word sectors  
bank  
Ready/Busy (RY/BY#) output indicates data available to system  
Suspend and Resume commands for Program and Erase Operation  
Offered Packages  
VersatileI/O™ control (1.65V to 3.6V)  
Programmable Burst Interface  
– Linear for 2, 4, and 8 double word burst with wrap around  
Secured Silicon Sector that can be either factory or customer locked  
20 year data retention (typical)  
– 80-pin PQFP  
– 80-ball Fortified BGA (13 x 11 mm and 11 x 9mm versions)  
– Pb-free package option available  
Cycling Endurance: 1 million write cycles per sector (typical)  
– Known Good Die  
Performance Characteristics  
Read Access Times  
Current Consumption (Max values)  
75  
Continuous Burst Read @ 75 MHz  
90 mA  
50 mA  
50 mA  
60 µA  
Speed Option (MHz)  
66  
56  
40  
(32 Mb only)  
Program  
Max Asynch. Access Time, ns (t  
)
54  
8
54  
8
54  
8
54  
8
ACC  
Erase  
Max Synch. Burst Access, ns (t  
)
BACC  
Standby Mode  
Min Initial Clock Delay (clock cycles)  
Max CE# Access Time, ns (t  
5
5
5
4
)
54  
20  
54  
20  
54  
20  
54  
20  
CE  
Typical Program and Erase Times  
Max OE# Access time, ns (t  
)
OE  
Double Word Programming  
Sector Erase  
18 µs  
1.0 s  
Notice for the 32Mb S29CD-J and S29CL-J devices only:  
Please refer to the application note “Recommended Mode of Operation for Spansion® 110 nm S29CD032J/S29CL032J Flash  
Memory” publication number S29CD-CL032J_Recommend_AN for programming best practices.  
Cypress Semiconductor Corporation  
Document Number: 002-00948 Rev. *A  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised December 16, 2015  
1234567...86

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S29CD016J0MFFI013 SPANSION Flash, 512KX32, 54ns, PBGA80, 13 X 11 MM, 1 MM PITCH, LEAD FREE, FORTIFIED, BGA-80

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S29CD016J0MFFI020 SPANSION Flash, 512KX32, 54ns, PBGA80, 13 X 11 MM, 1 MM PITCH, LEAD FREE, FORTIFIED, BGA-80

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S29CD016J0MFFI022 CYPRESS Flash, 512KX32, 54ns, PBGA80, BGA-80

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S29CD016J0MFFI023 SPANSION Flash, 512KX32, 54ns, PBGA80, 13 X 11 MM, 1 MM PITCH, LEAD FREE, FORTIFIED, BGA-80

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S29CD016J0MFFI032 CYPRESS Flash, 512KX32, 54ns, PBGA80, BGA-80

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