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S1AB-7 PDF预览

S1AB-7

更新时间: 2024-11-29 21:21:23
品牌 Logo 应用领域
美台 - DIODES 光电二极管
页数 文件大小 规格书
2页 85K
描述
Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, PLASTIC, SMB, 2 PIN

S1AB-7 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:R-PDSO-C2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.28配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:R-PDSO-C2
JESD-609代码:e0最大非重复峰值正向电流:30 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):235认证状态:Not Qualified
最大重复峰值反向电压:50 V子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

S1AB-7 数据手册

 浏览型号S1AB-7的Datasheet PDF文件第2页 
S1A/B - S1M/B  
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER  
SPICE MODELS: S1A S1B S1D S1G S1J S1K S1M  
Features  
·
·
Glass Passivated Die Construction  
Low Forward Voltage Drop and High Current  
Capability  
Surge Overload Rating to 30A Peak  
Ideally Suited for Automated Assembly  
SMA  
Min  
SMB  
Min  
B
·
·
Dim  
A
Max  
2.92  
4.60  
1.63  
0.31  
5.59  
0.20  
1.52  
2.62  
Max  
3.94  
4.57  
2.21  
0.31  
5.59  
0.20  
1.52  
2.62  
2.29  
4.00  
1.27  
0.15  
4.80  
0.10  
0.76  
2.01  
3.30  
4.06  
1.96  
0.15  
5.00  
0.10  
0.76  
2.00  
B
A
J
C
D
Mechanical Data  
C
·
·
Case: Molded Plastic  
Case Material - UL Flammability Rating  
Classification 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solder Plated Terminal -  
Solderable per MIL-STD-202, Method 208  
D
E
G
H
·
·
J
G
H
·
·
·
·
·
Polarity: Cathode Band or Cathode Notch  
SMA Weight: 0.064 grams (approx.)  
SMB Weight: 0.093 grams (approx.)  
Marking: Type Number, See Page 2  
Ordering Information: See Page 2  
E
All Dimensions in mm  
A, B, D, G, J, K, M Suffix Designates SMA Package  
AB, BB, DB, GB, JB, KB, MB Suffix Designates SMB Package  
TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
S1  
A/AB  
S1  
B/BB  
S1  
S1  
S1  
J/JB  
S1  
S1  
Characteristic  
Symbol  
Unit  
D/DB G/GB  
K/KB M/MB  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
35  
280  
1.0  
V
A
Average Rectified Output Current  
@ TT = 100°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
30  
A
Forward Voltage  
@ IF = 1.0A  
VFM  
IRM  
1.1  
V
5.0  
100  
Peak Reverse Leakage Current  
at Rated DC Blocking Voltage  
@ TA = 25°C  
@ TA = 125°C  
mA  
CT  
Typical Total Capacitance  
(Note 1)  
10  
30  
pF  
°C/W  
°C  
RqJT  
Typical Thermal Resistance, Junction to Terminal (Note 2)  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +150  
Notes:  
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2. Thermal Resistance Junction to Terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pads as heat sink.  
DS16003 Rev. 8 - 2  
1 of 2  
S1A/B - S1M/B  

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