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S10U45S PDF预览

S10U45S

更新时间: 2024-11-23 12:56:39
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 301K
描述
10 Ampere Lower VF Miniature Surface Mount Schottky Barrier Rectifier

S10U45S 数据手册

 浏览型号S10U45S的Datasheet PDF文件第2页 
S10U45S  
®
S10U45S  
Pb Free Plating Product  
10 Ampere Lower VF Miniature Surface Mount Schottky Barrier Rectifier  
Features  
Dimensions in inches and (millimeters)  
TO-277/POWERDI5  
High surge Forward current capability  
Low Power loss, High efficiency  
.161(4.10)  
.154(3.90)  
.045(1.15)  
.041(1.05)  
Mounting Pad Layout  
.014(0.35)  
.010(0.25)  
.075(1.90)  
.067(1.70)  
.132(3.36)  
I
( ) 10A  
AV  
F
V
45V  
RRM  
.039(1.00)  
.031(0.80)  
Applications  
Bottom  
.055(1.40)  
.072(1.84)  
.075(1.90)  
.071(1.80)  
Switching Power Supply Industry  
LEFT PIN  
RIGHT PIN  
BOTTOM SIDE  
HEAT SINK  
Note: Pins Left & Right must  
be electrically connected  
at the printed circuit board.  
Photovoltaic Solar cell Protection  
Schottky Rectifier  
Limiting ValuesAbsolute Maximum Rating)  
Symbol  
Unit  
Conditions  
Item  
S10U45S  
Repetitive Peak Reverse Voltage  
Average Rectified Output Current  
V
V
A
45  
RRM  
I
10  
60H sine wave, R- load, T =25℃  
o
Z
a
Surge(Non-repetitive)Forward  
Current  
60H sine wave, 1 cycle, T =25℃  
I
Z
a
A
275  
FSM  
2
2
313  
Current Squared Time  
Storage Temperature  
1mst8.3ms T =25℃  
I t  
A s  
j
-55 ~ +150  
T
stg  
IN DC Forward Mode-Forward Operations  
without reverse bias, t 1 h (Fig. 1)  
Junction Temperature  
T
j
-55~+200  
Electrical CharacteristicsTa=25Unless otherwise specified)  
Symbol  
Unit  
V
Item  
Test Condition  
Max  
V
I FM =10.0A  
0.47  
Peak Forward Voltage  
Peak Reverse Current  
FM  
I
T=25℃  
j
0.3  
15  
RRM1  
mA  
VRM =VRRM  
I
T=100℃  
j
RRM2  
R
θ
/W  
10  
J-L  
Between Junction and Lead  
Thermal Resistance(Typical)  
Page 1/2  
Rev.05  
© 2006 Thinki Semiconductor Co., Ltd.  
http://www.thinkisemi.com/  

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