Datasheet > S10U50TS

S10U50TS

更新时间： 2024-11-24 01:25:51

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描述
Planar MOS SCHOTTKY RECTIFIERS

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数据手册

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S10U50TS 数据手册

S10U50TS

10.0

REVERSE VOLTAGE -

FORWARD CURRENT -

Volts

Amperes

Planar MOS SCHOTTKY RECTIFIERS

TO-277

FEATURES

Low power loss, high efficiency

Low forward voltage drop

High forward surge capability

High frequency operation

Excellent high temperature stability

Planar MOS Schottky technology

Suffix "H" indicates halogen free parts,

MECHANICAL DATA

Case: TO-277

DIM(mm)

1.25±0.1

0.38±0.05

0.9±0.1

DIM(mm)

Polarity : Color band denotes cathode

Terminals: Pure tin plated, lead free

Mounting position : Any

1.84Typ.

5.3±0.1

3.5±0.1

0.8±0.15

0.6±0.1

1.3±0.2

1.8±0.1

3.95±0.1

3.05 Typ.

6.5±0.1

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Characteristics

Maximum Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

Maximum DC Blocking Voltage

RMS Reverse Voltage

Symbol

V_RRM

Value

Unit

V_RWM

V_DC

V_RMS

Forward Voltage Drop ¹⁾

Typ.

Max.

0.46

Max.

300

I_F=10A, T_J=25°C

I =10A, T =125°C

Maximum Reverse Current at Rated V_RRM

T_J=25°C

T =125°C

Maximum Average Forward Rectified Current

Peak Forward Surge Current,

8.3 ms Single Half Sine-wave

Superimposed on Rated Load (JEDEC method)

V_F

0.42

0.38

Typ.

120

I_R

I_O

µA

I_FSM

280

Peak Repetitive Reverse Current at tp=2 µs, 1 kHz,

Voltage rate of change(Rated VR)

I_RRM

dv/dt

T_J

2.0

V/us

°C

10,000

Operating Temperature Range

-65 to +150

-65 to +175

Storage Temperature Range

T_STG

°C

Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle

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