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S-LBC847ATT1G PDF预览

S-LBC847ATT1G

更新时间: 2024-10-29 02:52:31
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
5页 144K
描述
General Purpose Transistors NPN Silicon

S-LBC847ATT1G 数据手册

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LESHAN RADIO COMPANY, LTD.  
LBC847ATT1G  
Series  
Series  
S-LBC847ATT1G  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
V
V
V
V
V
(BR)CEO  
(I = 10 mA)  
C
LBC847 Series  
LBC847 Series  
LBC847 Series  
LBC847 Series  
45  
50  
50  
6.0  
CollectorEmitter Breakdown Voltage  
V
(BR)CES  
(BR)CBO  
(BR)EBO  
(I = 10 mA, V = 0)  
C
EB  
CollectorBase Breakdown Voltage  
(I = 10 mA)  
C
V
V
EmitterBase Breakdown Voltage  
(I = 1.0 mA)  
E
Collector Cutoff Current (V = 30 V)  
I
15  
5.0  
nA  
mA  
CB  
CBO  
(V = 30 V, T = 150°C)  
CB  
A
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
(I = 10 mA, V = 5.0 V)  
LBC847A  
LBC847B  
LBC847C  
90  
150  
270  
C
CE  
(I = 2.0 mA, V = 5.0 V)  
LBC847A  
LBC847B  
LBC847C  
110  
200  
420  
180  
290  
520  
220  
450  
800  
C
CE  
CollectorEmitter Saturation Voltage (I = 10 mA, I = 0.5 mA)  
V
0.25  
0.6  
V
V
C
B
CE(sat)  
BE(sat)  
CollectorEmitter Saturation Voltage (I = 100 mA, I = 5.0 mA)  
C
B
BaseEmitter Saturation Voltage (I = 10 mA, I = 0.5 mA)  
V
0.7  
0.9  
C
B
BaseEmitter Saturation Voltage (I = 100 mA, I = 5.0 mA)  
C
B
BaseEmitter Voltage (I = 2.0 mA, V = 5.0 V)  
V
BE(on)  
580  
660  
700  
770  
mV  
C
CE  
BaseEmitter Voltage (I = 10 mA, V = 5.0 V)  
C
CE  
SMALL−SIGNAL CHARACTERISTICS  
CurrentGain − Bandwidth Product  
f
100  
MHz  
T
(I = 10 mA, V = 5.0 Vdc, f = 100 MHz)  
C
CE  
Output Capacitance (V = 10 V, f = 1.0 MHz)  
C
obo  
4.5  
10  
pF  
dB  
CB  
Noise Figure  
NF  
(I = 0.2 mA, V = 5.0 Vdc, R = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)  
C
CE  
S
Rev.O 2/5  

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