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RSX201LAM30TF PDF预览

RSX201LAM30TF

更新时间: 2024-11-08 11:14:31
品牌 Logo 应用领域
罗姆 - ROHM 二极管
页数 文件大小 规格书
8页 2185K
描述
RSX201LAM30TF是低VF、低IR的肖特基势垒二极管,适合一般整流用途。是车载级的高可靠性产品。

RSX201LAM30TF 数据手册

 浏览型号RSX201LAM30TF的Datasheet PDF文件第2页浏览型号RSX201LAM30TF的Datasheet PDF文件第3页浏览型号RSX201LAM30TF的Datasheet PDF文件第4页浏览型号RSX201LAM30TF的Datasheet PDF文件第5页浏览型号RSX201LAM30TF的Datasheet PDF文件第6页浏览型号RSX201LAM30TF的Datasheet PDF文件第7页 
RSX201LAM30TF  
Schottky Barrier Diode  
(AEC-Q101 qualified)  
Data sheet  
Outline  
V
30  
2
V
A
A
R
I
o
I
60  
FSM  
Features  
Inner Circuit  
High reliability  
Small power mold type  
Low V and low I  
F
R
Application  
Packaging Specifications  
Packing  
General rectification  
Embossed Tape  
Reel Size(mm)  
Taping Width(mm)  
Quantity(pcs)  
180  
12  
3000  
TR  
Structure  
Silicon epitaxial planar  
Taping Code  
Marking  
54  
(T =25ºC unless otherwise specified)  
Absolute Maximum Ratings  
c
Parameter  
Repetitive peak reverse voltage  
Reverse voltage  
Symbol  
Conditions  
Duty0.5  
Limits  
30  
30  
Unit  
V
V
V
RM  
V
Reverse direct voltage  
R
Glass epoxy mounted  
I
60Hzhalf sin waveformresistive load、  
Average rectified forward current  
2
A
A
o
T =127Max.  
c
60Hzhalf sin waveformNon-repetitive、  
I
Peak forward surge current  
60  
FSM  
one cycleT =25℃  
a
Junction temperature(1)  
Storage temperature  
-
-
150  
-55 150  
T
T
stg  
j
Note(1) To avoid occurrence of thermal runawayactual board is to be designed to fulfill dP /dT<1/R .  
d
j
th(j-a)  
(T =25ºC unless otherwise specified)  
Characteristics  
j
Parameter  
Forward voltage  
Symbol  
Conditions  
Min. Typ. Max. Unit  
V
I =2A  
F
-
-
0.44  
V
F
I
R
Reverse current  
V =30V  
R
-
-
150 μA  
Attention  
www.rohm.com  
©2017- ROHMCo., Ltd.All rights reserved.  
1/5  
2022/01/18_Rev.003  

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