Datasheet > RSJ400N10

RSJ400N10

更新时间： 2023-09-03 20:25:08

品牌	Logo	应用领域
罗姆 - ROHM		通信晶体管
页数	文件大小	规格书
14页	2734K
描述
电界効果晶体管的MOSFET。提供通过采用细微流程的「针对通信产品的超低阻值的设备」而产生的节能的功率MOSFET，并且结合用途，以多样的小型高功率复合型的产品线对应多种市场需求。

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RSJ400N10 数据手册

RSJ400N10

Datasheet

Nch 100V 40A Power MOSFET

llOutline

TO-263S

V_DSS

100V

27mΩ

±40A

50W

SC-83

R_DS(on)(Max.)

LPT(S)

I_D

P_D

llInner circuit

llFeatures

1) Low on-resistance

2) Fast switching speed

3) High power small mold package

4) Pb-free plating ; RoHS compliant

llPackaging specifications

Embossed

Tape

Packing

Reel size (mm)

330

llApplication

Tape width (mm)

Quantity (pcs)

Taping code

Marking

Type

Switching

1000

RSJ400N10

llAbsolute maximum ratings (T = 25°C ,unless otherwise specified)

Parameter

Drain - Source voltage

Symbol

Value

Unit

V_DSS

100

±40

I_D

Continuous drain current

I_DP

Pulsed drain current

±80

V_GSS

Gate - Source voltage

±20

I_AS

Avalanche current, single pulse

Avalanche energy, single pulse

Power dissipation

E_AS

℃

P_D

T_j

Junction temperature

150

T_stg

Operating junction and storage temperature range

-55 to +150

www.rohm.com

1/11

20210712 - Rev.003

12 3 4 5 6 7...14

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