Datasheet > RSJ650N10

RSJ650N10

更新时间： 2024-11-24 09:43:55

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
7页	1120K
描述
4V Drive Nch MOSFET

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RSJ650N10 数据手册

Data Sheet

4V Drive Nch MOSFET

RSJ650N10

 Structure

 Dimensions (Unit : mm)

Silicon N-channel MOSFET

LPTS

10.1

4.5

1.3

Features

1) Low on-resistance.

2) High power package.

3) 4V drive.

1.24

0.4

2.54

0.78

2.7

5.08

(1) (2) (3)

 Application

Switching

 Packaging specifications

 Inner circuit

Package

Taping

∗1

Type

Code

Basic ordering unit (pieces)

1000



∗2

RSJ650N10

(1)

(2)

(3)

(1) Gate

(2) Drain

(3) Source

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

 Absolute maximum ratings (Ta = 25C)

Parameter Symbol

Drain-source voltage

Limits

100

Unit

V_DSS

V_GSS

I_D

Gate-source voltage

20

Continuous

Pulsed

65

Drain current

I_DP

130

Continuous

Pulsed

I_S*3

Source current

(Body Diode)

I_SP

130

Power dissipation

P_D

100

C

Channel temperature

Tch

150

Range of storage temperature

*1 P_W10s, Duty cycle1%

*2 T_C=25°C

Tstg

55 to 150

*3 Please use within the range of SOA.

 Thermal resistance

Parameter

Symbol

Rth (ch-c)^*

Limits

1.25

Unit

Channel to Case

* T_C=25°C

C / W

www.rohm.com

2011.06 - Rev.A

1/6

12 3 4 5 6 7

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