是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | LPTS, 3 PIN | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 16 weeks | 风险等级: | 1.68 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 55 A | 最大漏源导通电阻: | 0.0189 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 110 A |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
RSJ550N10FRATL | ROHM | Power Field-Effect Transistor, |
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RSJ550N10TL | ROHM | Power Field-Effect Transistor, 55A I(D), 100V, 0.0189ohm, 1-Element, N-Channel, Silicon, M |
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RSJ650N10 | ROHM | 4V Drive Nch MOSFET |
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RSJ650N10TL | ROHM | Power Field-Effect Transistor, 65A I(D), 100V, 0.0098ohm, 1-Element, N-Channel, Silicon, M |
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RSJ-BK | ALTECH | RS Series Relay Modules |
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RSJ-BL | ALTECH | RS Series Relay Modules |
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