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RSJ550N10 PDF预览

RSJ550N10

更新时间: 2024-01-30 04:34:27
品牌 Logo 应用领域
罗姆 - ROHM 驱动
页数 文件大小 规格书
7页 1119K
描述
4V Drive Nch MOSFET

RSJ550N10 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LPTS, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:16 weeks风险等级:1.68
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):55 A最大漏源导通电阻:0.0189 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):110 A
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

RSJ550N10 数据手册

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Data Sheet  
4V Drive Nch MOSFET  
RSJ550N10  
Structure  
Dimensions (Unit : mm)  
Silicon N-channel MOSFET  
LPTS  
10.1  
4.5  
1.3  
Features  
1.24  
1) Low on-resistance.  
2) High Power Package.  
3) 4V drive.  
0.4  
2.7  
2.54  
0.78  
5.08  
(1) (2) (3)  
Application  
Switching  
Packaging specifications  
Inner circuit  
1  
Package  
Taping  
TL  
Type  
Code  
Basic ordering unit (pieces)  
1000  
2  
RSJ550N10  
(1)  
(2)  
(3)  
(1) Gate  
(2) Drain  
(3) Source  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
Absolute maximum ratings (Ta = 25C)  
Parameter Symbol  
Drain-source voltage  
Limits  
100  
Unit  
V
VDSS  
VGSS  
ID  
Gate-source voltage  
20  
V
Continuous  
Pulsed  
55  
A
*3  
*1  
Drain current  
IDP  
110  
55  
A
*3  
*1  
Continuous  
Pulsed  
IS  
A
Source current  
(Body Diode)  
ISP  
110  
A
*2  
Power dissipation  
PD  
100  
W
C  
C  
Channel temperature  
Tch  
Tstg  
150  
Range of storage temperature  
*1 PW10s, Duty cycle1%  
*2 TC=25°C  
55 to 150  
*3 Please use within the range of SOA.  
Thermal resistance  
Parameter  
Symbol  
Rth (ch-c)*  
Limits  
1.25  
Unit  
Channel to Case  
* TC=25°C  
C / W  
www.rohm.com  
2011.06 - Rev.A  
© 2011 ROHM Co., Ltd. All rights reserved.  
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