Datasheet > RSJ450N04

RSJ450N04

更新时间： 2022-11-12 01:16:06

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
6页	1177K
描述
10V Drive Nch MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RSJ450N04 数据手册

Data Sheet

10V Drive Nch MOSFET

RSJ450N04

 Structure

 Dimensions (Unit : mm)

Silicon N-channel MOSFET

LPTS

10.1

4.5

1.3

Features

1.24

1) Low on-resistance.

2) High current

0.4

2.7

2.54

0.78

3) High power Package

5.08

(1) (2) (3)

 Application

Switching

 Packaging specifications

 Inner circuit

Package

Taping

∗1

Type

Code

Basic ordering unit (pieces)

1000

○

∗2

RSJ450N04

(1)

(2)

(3)

(1) Gate

(2) Drain

(3) Source

1 ESD PROTECTION DIODE

2 BODY DIODE

Absolute maximum ratings (T_a= 25°C)

Parameter Symbol

Drain-source voltage

Limits

Unit

V_DSS

V_GSS

I_D

20

Gate-source voltage

Continuous

Pulsed

45

Drain current

I_DP

90

Continuous

Pulsed

I_S

Source current

(Body Diode)

I_SP

Power dissipation

P_D

C

Channel temperature

Tch

Tstg

150

Range of storage temperature

55to150

*1 Pw10s, Duty cycle1%

*2 T =25C

 Thermal resistance

Parameter

Symbol

R_{th (ch-c)}

Limits

2.5

Unit

Channel to Case

C / W

* T =25C

www.rohm.com

2011.09 - Rev.A

1/5

12 3 4 5 6

下载PDF

与RSJ450N04相关器件

型号	品牌	描述	获取价格	数据表
RSJ451N04FRA	ROHM	RSJ451N04FRA是适合开关用途的车载型高可靠性MOSFET。	获取价格
RSJ550N10	ROHM	4V Drive Nch MOSFET	获取价格
RSJ550N10FRATL	ROHM	Power Field-Effect Transistor,	获取价格
RSJ550N10TL	ROHM	Power Field-Effect Transistor, 55A I(D), 100V, 0.0189ohm, 1-Element, N-Channel, Silicon, M	获取价格
RSJ650N10	ROHM	4V Drive Nch MOSFET	获取价格
RSJ650N10TL	ROHM	Power Field-Effect Transistor, 65A I(D), 100V, 0.0098ohm, 1-Element, N-Channel, Silicon, M	获取价格