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RP1E050RP PDF预览

RP1E050RP

更新时间: 2024-11-10 06:08:39
品牌 Logo 应用领域
罗姆 - ROHM 驱动
页数 文件大小 规格书
6页 315K
描述
4V Drive Pch MOSFET

RP1E050RP 数据手册

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4V Drive Pch MOSFET  
RP1E050RP  
Structure  
Dimensions (Unit : mm)  
Silicon P-channel MOSFET  
MPT6  
(6)  
(1)  
(5)  
(4)  
Features  
1) Low On-resistance.  
2) High power package.  
3) 4V drive.  
(2)  
(3)  
Application  
Switching  
Packaging specifications  
Inner circuit  
(6)  
(5)  
(4)  
Package  
Taping  
TR  
Type  
Code  
Basic ordering unit (pieces)  
1000  
RP1E050RP  
2  
(1) Source  
(2) Source  
(3) Gate  
(4) Drain  
(5) Drain  
(6) Drain  
1  
Absolute maximum ratings (Ta = 25C)  
Parameter  
(1)  
(2)  
(3)  
Symbol  
VDSS  
VGSS  
ID  
Limits  
30  
Unit  
V
1 ESD PROTECTION DIODE  
2 BODY DIODE  
Drain-source voltage  
Gate-source voltage  
20  
V
Continuous  
5  
A
Drain current  
Pulsed  
*1  
IDP  
20  
A
Continuous  
Pulsed  
IS  
1.6  
A
Source current  
(Body Diode)  
*1  
*2  
ISP  
20  
A
Power dissipation  
PD  
2.0  
W
C  
C  
Channel temperature  
Tch  
Tstg  
150  
Range of storage temperature  
*1 Pw10s, Duty cycle1%  
55 to +150  
*2 Mounted on a ceramic board.  
Thermal resistance  
Parameter  
Symbol  
Rth (ch-a)*  
Limits  
62.5  
Unit  
Channel to Ambient  
*Mounted on a ceramic board.  
C / W  
www.rohm.com  
©2010 ROHM Co., Ltd. All rights reserved.  
2010.04 - Rev.A  
1/5  

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