Datasheet > RP1E100XN

RP1E100XN

更新时间： 2024-11-10 09:44:55

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
6页	321K
描述
4V Drive Nch MOSFET

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中文翻译

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数据手册

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RP1E100XN 数据手册

4V Drive Nch MOSFET

RP1E100XN

 Structure

 Dimensions (Unit : mm)

Silicon N-channel MOSFET

MPT6

(Single)

(6)

(1)

(5)

(2)

(4)

(3)

Features

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (MPT6).

 Application

Switching

 Packaging specifications

 Inner circuit

Package

Taping

(6)

(5)

(4)

Type

Code

Basic ordering unit (pieces)

1000



RP1E100XN

∗2

(1) Source

(2) Source

(3) Gate

∗1

(4) Drain

(5) Drain

(6) Drain

(1)

(2)

(3)

 Absolute maximum ratings (Ta = 25C)

Parameter Symbol

Drain-source voltage

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

Limits

Unit

V_DSS

V_GSS

I_D

Gate-source voltage

20

Continuous

Pulsed

10

Drain current

I_DP

36

Continuous

Pulsed

I_S

1.6

Source current

(Body Diode)

I_SP

Power dissipation

P_D

2.0

C

Channel temperature

Tch

Tstg

150

Range of storage temperature

*1 Pw10s, Duty cycle1%

55 to +150

*2 Mounted on a ceramic board.

 Thermal resistance

Parameter

Symbol

Rth (ch-a)^*

Limits

62.5

Unit

Channel to Ambient

*Mounted on a ceramic board.

C / W

www.rohm.com

2010.09 - Rev.A

1/5

12 3 4 5 6

中文翻译

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