Datasheet > RP1E075RP

RP1E075RP

更新时间： 2024-11-20 09:44:59

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
6页	395K
描述
4V Drive Pch MOSFET

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中文翻译

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数据手册

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RP1E075RP 数据手册

4V Drive Pch MOSFET

RP1E075RP

 Structure

 Dimensions (Unit : mm)

Silicon P-channel MOSFET

MPT6

(Single)

Features

(6)

(1)

(5)

(2)

(4)

(3)

1) Low On-resistance.

2) High power package.

3) 4V drive.

 Application

Switching

 Inner circuit

(6)

(5)

(4)

 Packaging specifications

Package

Taping

Type

Code

∗2

Basic ordering unit (pieces)

1000



(1) Source

(2) Source

(3) Gate

RP1E075RP

∗1

(4) Drain

(5) Drain

(6) Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

(1)

(2)

(3)

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol

V_DSS

V_GSS

I_D

Limits

30

20

Unit

Drain-source voltage

Gate-source voltage

Continuous

7.5

30

Drain current

Pulsed

I_DP

I_S

Continuous

Pulsed

1.6

30

2.0

Source current

(Body Diode)

I_SP

P_D

Power dissipation

C

Channel temperature

Tch

150

55 to +150

Range of storage temperature

*1 Pw10s, Duty cycle1%

Tstg

*2 Mounted on a ceramic board.

 Thermal resistance

Parameter

Symbol

Rth (ch-a)^*

Limits

62.5

Unit

Channel to Ambient

*Mounted on a ceramic board.

C / W

www.rohm.com

2010.08 - Rev.A

1/5

12 3 4 5 6

中文翻译

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