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RN4909FE PDF预览

RN4909FE

更新时间: 2024-11-16 12:23:03
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号双极晶体管光电二极管驱动
页数 文件大小 规格书
6页 287K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN4909FE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.52
Is Samacsys:N其他特性:BUILT IN BIAS RESISTOR RATIO IS 0.47
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):70
JESD-30 代码:R-PDSO-F6元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN AND PNP最大功率耗散 (Abs):0.1 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

RN4909FE 数据手册

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RN4909FE  
TOSHIBA Transistor Silicon PNP · NPN Epitaxial Type  
(PCT Process) (Bias Resistor Built-in Transistor)  
RN4909FE  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
Driver Circuit Applications  
Two devices are incorporated into an Extreme-Super-Mini (6-pin)  
package.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enables the manufacture of ever more  
compact equipment and lowers assembly cost.  
Equivalent Circuit and Bias Resistor Values  
Q1  
Q2  
C
C
R1  
R1  
B
B
JEDEC  
JEITA  
E
E
TOSHIBA  
2-2N1G  
R1: 47 kΩ  
Weight: 0.003g (typ.)  
R2: 22 kΩ  
(Q1, Q2 common)  
Marking  
Equivalent Circuit (top view)  
6
5
2
4
Q2  
3
V J  
Q1  
1
1
2007-11-01  

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