Datasheet > RN4911FE(TE85L,F)

RN4911FE(TE85L,F)

更新时间： 2024-10-03 06:37:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	279K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP

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RN4911FE(TE85L,F) 数据手册

RN4911FE

TOSHIBA Transistor Silicon PNP·NPN Epitaxial Type

(PCT Process) (Bias Resistor Built-in Transistor)

RN4911FE

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (6-pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more

compact equipment and lowers assembly cost.

Equivalent Circuit and Bias Resistor Values

JEDEC

JEITA

―

TOSHIBA

2-2N1G

R1: 10 kΩ

Weight: 0003 g (typ.)

(Q1, Q2 common)

Marking

Equivalent Circuit (top view)

V M

2007-11-01

12 3 4 5 6

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型号	品牌	获取价格	描述	数据表
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RN4981FE(T5LMAA,F)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
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