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RN4911TE85N PDF预览

RN4911TE85N

更新时间: 2024-11-16 20:01:03
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
6页 285K
描述
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

RN4911TE85N 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.78
最大集电极电流 (IC):0.1 A基于收集器的最大容量:6 pF
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):120JESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN AND PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
VCEsat-Max:0.3 VBase Number Matches:1

RN4911TE85N 数据手册

 浏览型号RN4911TE85N的Datasheet PDF文件第2页浏览型号RN4911TE85N的Datasheet PDF文件第3页浏览型号RN4911TE85N的Datasheet PDF文件第4页浏览型号RN4911TE85N的Datasheet PDF文件第5页浏览型号RN4911TE85N的Datasheet PDF文件第6页 
RN4911  
TOSHIBA Transistor  
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)  
RN4911  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
Unit: mm  
z Including two devices in US6 (ultra super mini type with 6 leads)  
z With built-in bias resistors  
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
Equivalent Circuit and Bias Resister Values  
R1: 10k  
(Q1, Q2 Common)  
JEDEC  
JEITA  
TOSHIBA  
2-2J1A  
Q1 Absolute Maximum Ratings (Ta = 25°C)  
Weight: 6.8mg (typ.)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
5  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
100  
mA  
C
Q2 Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
5
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
100  
mA  
C
1
2007-11-01  

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