Datasheet > RN4983AFS(TPL3)

RN4983AFS(TPL3)

更新时间： 2024-01-04 13:32:44

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	168K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,80MA I(C),TSOP

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中文翻译

获取价格

技术参数
数据手册

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RN4983AFS(TPL3) 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	最大集电极电流 (IC)：	0.08 A
最小直流电流增益 (hFE)：	70	元件数量：	2
极性/信道类型：	NPN/PNP	最大功率耗散 (Abs)：	0.05 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN4983AFS(TPL3) 数据手册

RN4983AFS

TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type

(PCT Process) (Transistor with Built-in Bias Resistor)

RN4983AFS

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

Driver Circuit Applications

1.0±0.05

0.8±0.05

0.1±0.05

•

Two devices are incorporated into a fine-pitch, small-mold (6-pin)

package.

Incorporating a bias resistor into the transistor reduces the number of

parts, so enabling the manufacture of ever more compact equipment and

lowering assembly cost.

Equivalent Circuit and Bias Resistor Values

(E1)

1. EMITTER1

2. BASE1

3. COLLECTOR2

4. EMITTER2

(B1)

(C2)

(E2)

(B2)

(C1)

5. BASE2

fS6 6. COLLECTOR1

JEDEC

JEITA

―

R1: 22 kΩ

TOSHIBA

2-1F1D

R2: 22 kΩ

Weight: 0.001g (typ.)

(Q1, Q2 common)

Equivalent Circuit (top view)

Marking

Type name

2007-11-01

12 3 4 5 6

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