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RN4987 PDF预览

RN4987

更新时间: 2024-09-07 22:23:43
品牌 Logo 应用领域
东芝 - TOSHIBA PC
页数 文件大小 规格书
6页 154K
描述
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)

RN4987 数据手册

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RN4987  
TOSHIBA Transistor  
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)  
RN4987  
Switching, Inverter Circuit, Interface Circuit  
Unit: mm  
And Driver Circuit Applications  
l Includeing two devices in US6 (Ultra super mini type with 6 leads)  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
Equivalent Circuit and Bias Resister Values  
R1: 10k  
R2: 47kΩ  
(Q1, Q2 Common)  
Q1 Maximum Ratings (Ta = 25°C)  
JEDEC  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
EIAJ  
V
50  
50  
6
V
V
TOSHIBA  
Weight: 6.8mg  
2-2J1A  
CBO  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
CEO  
EBO  
V
V
I
100  
mA  
C
Q2 Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
6  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
100  
mA  
C
1
2001-06-07  

RN4987 替代型号

型号 品牌 替代类型 描述 数据表
EMD9T2R ROHM

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Digital Transistor (Dual Digital Transistors for Inverter Drive)
MUN5314DW1T1G ONSEMI

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Dual Bias Resistor Transistors

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